Overview
- Presents a lot of self-developed novel circuit design technologies for high-sensitivity silicon-based radiometers
- Verifies high-sensitivity photoelectric receiver based on self-developed novel transimpedance amplifier and photodiode
- Provides valuable guidance for high-sensitivity millimeter radiometers and photoelectric receiver design
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About this book
The book introduces various silicon-based critical design technologies aim to overcome the limitations inherent in silicon devices, distinctly enhancing sensitivity with a broad bandwidth. These innovative design methodologies, initially proposed and subsequently validated through meticulous measurements, represent a pioneering contribution. The book provides readers with detailed insights into design intricacies and considerations. Its audience includes undergraduate and graduate students with a specific interest in RF/optoelectronic receiver technology, along with researchers and engineers engaged in the study of imaging systems, data centers, or other communication applications.
Keywords
Table of contents (10 chapters)
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Front Matter
Authors and Affiliations
About the author
From 2007 to 2008, he worked as a research associate in the Institute of Micro-electronics, Chinese Academy of Sciences (IMECAS), Beijing, China. From 2009 to 2013, he was a research scholar with NUS and Institute of Micro-electronics (IME), Agency for Science, Technology and Research (A*STAR) engaged in silicon-based millimeter-wave ICs for THz imaging and Gb/s wireless communication. From 2013 to 2015, he was a research scientist with IME, A*STAR and worked on high-speed IC design. In Dec. 2014, he joined the School of Optical and Electronic Information/School of Integrated Circuits, HuazhongUniversity of Science and Technology, Wuhan, China, where he has been a full professor since Nov. 2020.
His current research interests include IC design for high-speed communications and mmWave/THz imaging. More specifically, Dr. BI and his team have developed silicon-based wideband driver amplifier, transimpedance amplifier and multiplexer for 4×25 GB/56 GB/100 GB+ wireline communications, silicon-based W-band and V-band high-sensitivity receivers and hybrid modules for imaging and remote sensing including the world’s first single-pole double-throw distributed amplifier that achieves the lowest switching loss on silicon at W-band, silicon-based Q-band power amplifier and transmitter for high-speed wireless communications.
Dr. Bi served as an associate editor for IEEE Access (2019-2022). He is a technical reviewer for Journal of Solid-State Circuits, IEEE Transactions on Circuits and Systems I, IEEE Transactions on Microwave Theory and Techniques, etc.
Bibliographic Information
Book Title: Silicon-Based High-Sensitivity Broadband Receiver
Authors: Xiaojun Bi
DOI: https://doi.org/10.1007/978-981-97-0881-9
Publisher: Springer Singapore
eBook Packages: Engineering, Engineering (R0)
Copyright Information: The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024
Hardcover ISBN: 978-981-97-0880-2Published: 20 March 2024
Softcover ISBN: 978-981-97-0883-3Due: 20 April 2024
eBook ISBN: 978-981-97-0881-9Published: 19 March 2024
Edition Number: 1
Number of Pages: XIII, 179
Number of Illustrations: 14 b/w illustrations, 146 illustrations in colour
Topics: Circuits and Systems, Electronic Circuits and Devices, Optics, Lasers, Photonics, Optical Devices, Materials Science, general