Skip to main content
  • Conference proceedings
  • © 2023

Micro and Nanoelectronics Devices, Circuits and Systems

Select Proceedings of MNDCS 2022

  • Presents state-of-the-art research and developments in micro and nanoelectronics devices, circuits, and systems

  • Is useful for academic researchers and practitioners in the industry

  • Includes the peer-reviewed proceedings of MNDCS-2022

Part of the book series: Lecture Notes in Electrical Engineering (LNEE, volume 904)

  • 1578 Accesses

Buying options

eBook USD 219.00
Price excludes VAT (USA)
  • ISBN: 978-981-19-2308-1
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
Hardcover Book USD 279.99
Price excludes VAT (USA)

This is a preview of subscription content, access via your institution.

Table of contents (50 papers)

  1. Front Matter

    Pages i-xvi
  2. Micro/Nanoelectronics Devices

    1. Front Matter

      Pages 1-1
    2. Development of Ni-Doped Zinc Oxide Films via Sol-Gel Synthesis

      • Soumya Sundar Parui, Vipul Kheraj, Nidhi Tiwari, Ram Narayan Chauhan
      Pages 3-9
    3. Modeling and Optimization Study of HIT-CBTSSe Tandem Solar Cell

      • S. Vallisree, Trupti Ranjan Lenka, J. Mrudula
      Pages 11-19
    4. High-k Dielectric Influence on Recessed-Gate Gallium Oxide MOSFETs

      • Pharyanshu Kachhawa, Nidhi Chaturvedi
      Pages 21-29
    5. Design and Temperature Analysis of Si0.8Ge0.2-Based Extended Gate Gate-All-Around TFET

      • Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal, Dibyendu Chowdhury
      Pages 31-39
    6. Optimization of Subthreshold Parameters of Graded-Channel Gate-Stack Double-Gate (GC-GS-DG) MOSFET Using PSO-CFIWA

      • Dibyendu Chowdhury, Bishnu Prasad De, Sumalya Ghosh, Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal
      Pages 41-50
    7. A Comparative Study on Electrical Characteristics of Bulk, SOI, and DG MOSFET

      • Asutosh Patnaik, Narayan Sahoo, Ajit Kumar Sahu
      Pages 51-59
    8. Optical Analysis of Far-Field Intensity on Organic Light-Emitting Diode to Reduce Surface Plasmon Losses

      • B. M. Chaya, Koushik Guha, M. Venkatesha, A. Vaishnavi, K. Narayan
      Pages 61-69
    9. Analog Performance of Normally-On Si3N4/AlN/β-Ga2O3 HEMT

      • Meenakshi Chauhan, Abdul Naim Khan, Raghuvir Tomar, Kanjalochan Jena
      Pages 71-78
    10. Modulation of Electronic Properties in Double Quantum Well-Based FET Structure

      • Ajit Kumar Sahu, Narayan Sahoo, Asutosh Patnaik
      Pages 79-88
    11. Comparative Analysis of Different Types of Gate Field Plate AlGaN/GaN HEMT

      • Pichingla Kharei, Achinta Baidya, Niladri Pratap Maity
      Pages 89-95
    12. Advantages of Polarization Engineered Quantum Barriers in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron Blocking Layer Free Approach

      • Ravi Teja Velpula, Barsha Jain, Samadrita Das, Trupti Ranjan Lenka, Hieu Pham Trung Nguyen
      Pages 97-102

About this book

This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2022). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.

Keywords

  • Microelectronics
  • Nanoelectronics
  • Microsystem and Nanosystems
  • MEMS & NEMS
  • Nanomaterials
  • Semiconductor Device
  • Quantum Electronics
  • VLSI Design
  • VLSI Circuit
  • VLSI System
  • MNDCS Proceedings
  • MNDCS 2022

Editors and Affiliations

  • Electronics and Communication Engineering, National Institute Of Technology Silchar, Silchar, India

    Trupti Ranjan Lenka

  • Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, USA

    Durgamadhab Misra

  • Electronic Materials Engineering, Australian National University, Canberra, Australia

    Lan Fu

About the editors

Trupti Ranjan Lenka is an Assistant Professor in the Department of Electronics and Communication Engineering, National Institute of Technology, Silchar, India. He received a B.E. degree in Electronics and Communication Engineering from Berhampur University, Odisha, in 2000, M.Tech. degree in VLSI Design from Dr. A. P. J. Abdul Kalam Technical University, Lucknow, in 2007 and a Ph.D. degree in Microelectronics Engineering from Sambalpur University, Odisha, in 2012. He was Visiting Researcher at Helen and John C. Hartmann Department of Electrical and Computer Engineering, New Jersey Institute of Technology (NJIT), Newark, New Jersey, the USA, in 2019, and Solar Energy Research Institute of Singapore (SERIS), National University of Singapore (NUS), Singapore, in 2018. He received Distinguished Faculty Award by NIT, Silchar, in 2019. He has supervised 10 Ph.D. and 19 M.Tech. students. He has published 90 journal research papers, 10 chapters, and 47 conference papers to his credit and delivered 15 invited talks. His research interests include nanoelectronics: III-nitride heterojunction devices (HEMT, NW LED), solar photovoltaics, energy harvesting using MEMS, and nanotechnology. Currently, he is handling 03 sponsored research projects funded by DST-SERB (ASEAN-India Collaborative R&D project), and CSIR-EMR-II on the development of high-efficiency perovskite solar cells, and Visvesvaraya YFRF by MeitY, Govt. of India.

Durgamadhab Misra is a Professor in the Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey, the USA. He received the M.S. and Ph.D. degrees in electrical engineering from the University of Waterloo, Waterloo, ON, Canada, in 1985 and 1988, respectively. His current research interest areas are nanoelectronic/optoelectronic devices and circuits, especially in nanometer CMOS gate stacks and device reliability. He is a Fellow of IEEE and Distinguished Lecturer of IEEE Electron Devices Society (EDS), serving in the IEEE EDS Board of Governors. He is also a Fellow of the Electrochemical Society (ECS). He received the Thomas Cullinan Award from the Dielectric Science & Technology Division of ECS. He edited and co-edited over 50 books and conference proceedings in his field of research. He has also published more than 200 technical articles in peer-reviewed journals and international conference proceedings and delivered 125 invited talks. He supervised 20 Ph.D. students and 45 M.S. students.

Lan Fu received her Ph.D. degree from the Australia National University (ANU) in 2001 and is currently a Full Professor at the Research School of Physics, ANU. She is Chair of IEEE Nanotechnology Council Chapters & Regional Activities Committee, Associate Editor of IEEE Photonics Journal, and Member of Editorial Board of Opto-Electronic Advances. She is also a Member of the Australian Academy of Science National Committee on Materials Science and Engineering, Secretary of the Executive Committee of Australian Materials Research Society (AMRS), and Australian Research Council College of Experts. Her main research interests include design, fabrication, and integration of optoelectronic devices (LEDs, lasers, photodetectors, and solar cells) based on low-dimensional III-V compound semiconductor structures including quantum wells, self-assembled quantum dots, and nanowires grown by metal-organic chemical vapor deposition (MOCVD).

Bibliographic Information

Buying options

eBook USD 219.00
Price excludes VAT (USA)
  • ISBN: 978-981-19-2308-1
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
Hardcover Book USD 279.99
Price excludes VAT (USA)