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III-Nitride LEDs

From UV to Green

  • Book
  • © 2022

Overview

Authors:
  1. Shengjun Zhou

    1. Wuhan University, Wuhan, China

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    You can also search for this author in PubMed   Google Scholar

  2. Sheng Liu

    1. Wuhan University, Wuhan, China

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    You can also search for this author in PubMed   Google Scholar

  • Presents the state-of-the-art research on III-nitrides-based LEDs
  • Covers the physical background, the epitaxial growth and device fabrication of III-nitrides-based LEDs
  • A valuable source of reference for professionals and researchers in the field

Part of the book series: Advances in Optics and Optoelectronics (AOO)

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Table of contents (6 chapters)

  1. Front Matter

    Pages i-viii
    Download chapter PDF

  2. Physics of III-Nitride Light-Emitting Diodes

    • Shengjun Zhou, Sheng Liu
    Pages 1-11

  3. Epitaxial Growth of III-Nitride LEDs

    • Shengjun Zhou, Sheng Liu
    Pages 13-89

  4. High-Efficiency Top-Emitting III-Nitride LEDs

    • Shengjun Zhou, Sheng Liu
    Pages 91-149

  5. Flip-Chip III-Nitride LEDs

    • Shengjun Zhou, Sheng Liu
    Pages 151-191

  6. High Voltage and Vertical LEDs

    • Shengjun Zhou, Sheng Liu
    Pages 193-216

  7. Device Reliability and Measurement

    • Shengjun Zhou, Sheng Liu
    Pages 217-239
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Keywords

About this book

This book highlights state-of-the-art in III-nitrides-based light-emitting diodes (LEDs). Motivated by the application prospects in lighting, high-resolution display, and health & medicine, the book systematically introduces the physical fundamentals, epitaxial growth, and device fabrications of III-nitride-based LEDs. Important topics including the structures of chips, device reliability and measurements and the advances in mini and micro LEDs are also discussed. The book is completed with a decade of research experience of the author’s team in the design and fabrication of III-nitrides-based LEDs, presenting the novel achievements in the stress control of the large mismatch heterostructures, defect formation and inhibition mechanism of the heteroepitaxial growth, LED epitaxial technologies, and the fabrication of high-efficient flip-chip LEDs. The book comprises of a valuable reference source for researchers and professionals engaged in the research and development of III-nitrides-based LEDs.


Authors and Affiliations

  • Wuhan University, Wuhan, China

    Shengjun Zhou, Sheng Liu

About the authors

Dr. Shengjun Zhou
​Shengjun Zhou received his Ph.D. degree from Shanghai Jiao Tong University, China in 2011. He is currently full Professor at Wuhan University, China. He was Research Fellow at the University of Michigan, Ann Arbor during 2014 and 2015. His research focuses on the growth and device fabrication of GaN-based blue/green/ultraviolet LEDs. 

Sheng Liu received his Ph.D. degree from Stanford University, USA in 1992. He is currently full professor at Wuhan University. His current research interests focus on the areas of LEDs, MEMS, optoelectronics,sensor and electronics packaging. 

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