CMOS RF Circuit Design for Reliability and Variability

  • Jiann-Shiun¬†Yuan

Part of the SpringerBriefs in Applied Sciences and Technology book series (BRIEFSAPPLSCIENCES)

Also part of the SpringerBriefs in Reliability book sub series (SBR)

Table of contents

  1. Front Matter
    Pages i-vi
  2. Jiann-Shiun Yuan
    Pages 1-2
  3. Jiann-Shiun Yuan
    Pages 11-18
  4. Jiann-Shiun Yuan
    Pages 19-31
  5. Jiann-Shiun Yuan
    Pages 33-48
  6. Jiann-Shiun Yuan
    Pages 49-53
  7. Jiann-Shiun Yuan
    Pages 55-69
  8. Jiann-Shiun Yuan
    Pages 71-88
  9. Jiann-Shiun Yuan
    Pages 89-97
  10. Jiann-Shiun Yuan
    Pages 99-106

About this book

Introduction

The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.

Keywords

Device Reliaiblity Hot Electron Effect Oxide Breakdown Process Variation RF Circuit Reliability

Authors and affiliations

  • Jiann-Shiun¬†Yuan
    • 1
  1. 1.Electrical Engineering and Comp SciUniversity of Central FloridaOrlandoUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-981-10-0884-9
  • Copyright Information The Author(s) 2016
  • Publisher Name Springer, Singapore
  • eBook Packages Engineering
  • Print ISBN 978-981-10-0882-5
  • Online ISBN 978-981-10-0884-9
  • Series Print ISSN 2191-530X
  • Series Online ISSN 2191-5318
  • About this book