High Mobility and Quantum Well Transistors

Design and TCAD Simulation

  • Geert Hellings
  • Kristin De Meyer

Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 42)

Table of contents

  1. Front Matter
    Pages I-XVIII
  2. Geert Hellings, Kristin De Meyer
    Pages 1-5
  3. Geert Hellings, Kristin De Meyer
    Pages 7-26
  4. Geert Hellings, Kristin De Meyer
    Pages 27-47
  5. Geert Hellings, Kristin De Meyer
    Pages 49-73
  6. Geert Hellings, Kristin De Meyer
    Pages 75-103
  7. Geert Hellings, Kristin De Meyer
    Pages 105-126
  8. Geert Hellings, Kristin De Meyer
    Pages 127-130
  9. Back Matter
    Pages 131-140

About this book

Introduction

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials.

High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.

Keywords

Drain Junction FETs High-mobility semiconductors Implant-Free Ion Implants in Germanium Quantum Well Transistors Scaled Technologies Silicon Germanium TCAD Modeling TCAD Simulation

Authors and affiliations

  • Geert Hellings
    • 1
  • Kristin De Meyer
    • 2
  1. 1.CMOS Technology DepartmentIMECLeuvenBelgium
  2. 2.CMOS Technology DepartmentIMECLeuvenBelgium

Bibliographic information

  • DOI https://doi.org/10.1007/978-94-007-6340-1
  • Copyright Information Springer Science+Business Media Dordrecht 2013
  • Publisher Name Springer, Dordrecht
  • eBook Packages Engineering
  • Print ISBN 978-94-007-6339-5
  • Online ISBN 978-94-007-6340-1
  • Series Print ISSN 1437-0387
  • About this book