Describes the use of interface control to maximize the potential of materials in nanoscale phenomena
Introduces the combinatorial synthesis method for thin film growth used in the optimization of numerous multi-component functional materials
Explains analysis methods combining angle-resolved measurements and hard x-ray photoelectron spectroscopy
Part of the book series: NIMS Monographs (NIMSM)
Buy it now
Tax calculation will be finalised at checkout
Other ways to access
This is a preview of subscription content, access via your institution.
Table of contents (7 chapters)
About this book
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
- Combinatorial Synthesis
- Metal/oxide Interface
- Plasma Surface Treatment
- Resistive Random Access Memory
- Schottky Contact
- Surface Electron Accumulation Layer
- X-ray Photoelectron Spectroscopy
- X-ray Reflectometry
Authors and Affiliations
Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
About the author
Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University.
His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.
Book Title: Nanoscale Redox Reaction at Metal/Oxide Interface
Book Subtitle: A Case Study on Schottky Contact and ReRAM
Authors: Takahiro Nagata
Series Title: NIMS Monographs
Publisher: Springer Tokyo
Copyright Information: National Institute for Materials Science, Japan 2020
Softcover ISBN: 978-4-431-54849-2Published: 22 May 2020
eBook ISBN: 978-4-431-54850-8Published: 21 May 2020
Series ISSN: 2197-8891
Series E-ISSN: 2197-9502
Edition Number: 1
Number of Pages: XI, 89
Number of Illustrations: 12 b/w illustrations, 51 illustrations in colour