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Nanoscale Redox Reaction at Metal/Oxide Interface

A Case Study on Schottky Contact and ReRAM

  • Book
  • © 2020

Overview

  • Describes the use of interface control to maximize the potential of materials in nanoscale phenomena
  • Introduces the combinatorial synthesis method for thin film growth used in the optimization of numerous multi-component functional materials
  • Explains analysis methods combining angle-resolved measurements and hard x-ray photoelectron spectroscopy

Part of the book series: NIMS Monographs (NIMSM)

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About this book

Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.  

The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.

In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.


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Table of contents (7 chapters)

Authors and Affiliations

  • Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan

    Takahiro Nagata

About the author

Takahiro Nagata is a Group Leader at the Research Center for Functional Materials, National Institute for Materials Science (NIMS). He received his Ph.D. from Osaka Prefecture University in 2003. He joined NIMS as a Researcher at the Advanced Electric Materials Center in 2006, was appointed a Senior Researcher in the Semiconductor Device Materials Group at MANA in 2011, and has served in his current position since 2018. He was also a Visiting Scientist at the Department of Materials, University of California Santa Barbara in 2008-2009. Currently he is also a Visiting Professor at the Graduate School of Science and Technology, Meiji University. 

His work focuses on developing combinatorial synthesis systems and high-throughput characterization tools for screening candidate materials in the context of materials informatics. Most recently, he has begun expanding his focus to nanoelectronics materials, including wide band-gap semiconductors.



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