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About this book
The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.
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Keywords
- Transistor
- Transport
- field-effect transistor
- heterojunction bipolar transistor
- integrated circuit
- ion-sensitive field effect transistor
- metal insulator semiconductur field-effect transistor
- metal oxide semiconductur field-effect transistor
- metal semiconductor field-effect transistor
- micro-alloy transistor, MAT
- physics
- simulation
Table of contents (6 chapters)
Authors and Affiliations
Bibliographic Information
Book Title: The Monte Carlo Method for Semiconductor Device Simulation
Authors: Carlo Jacoboni, Paolo Lugli
Series Title: Computational Microelectronics
DOI: https://doi.org/10.1007/978-3-7091-6963-6
Publisher: Springer Vienna
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eBook Packages: Springer Book Archive
Copyright Information: Springer-Verlag/Wien 1989
Hardcover ISBN: 978-3-211-82110-7Published: 30 October 1989
Softcover ISBN: 978-3-7091-7453-1Published: 05 October 2011
eBook ISBN: 978-3-7091-6963-6Published: 06 December 2012
Series ISSN: 0179-0307
Edition Number: 1
Number of Pages: X, 359
Topics: Circuits and Systems, Electronics and Microelectronics, Instrumentation, Simulation and Modeling, Condensed Matter Physics, Computational Intelligence