3-Dimensional Process Simulation

  • J. Lorenz
Conference proceedings

Table of contents

  1. Front Matter
    Pages i-viii
  2. Masato Fujinaga, Norihiko Kotani
    Pages 1-29
  3. H. Umimoto, S. Odanaka, A. Gohda
    Pages 30-56
  4. A. R. Neureuther, R. H. Wang, J. J Helmsen, J. F. Sefler, E. W. Scheckler, R. Gunturi et al.
    Pages 57-76
  5. Mark E. Law, Stephen Cea
    Pages 77-94
  6. B. Baccus, S. Bozek, V. Senez, Z. Z. Wang
    Pages 95-108
  7. J. Lorenz, E. Bär, A. Burenkov, W. Henke, K. Tietzel, M. Weiß
    Pages 109-135
  8. E. Leitner, W. Bohmayr, P. Fleischmann, E. Strasser, S. Selberherr
    Pages 136-161
  9. M. Westermann, T. Feudel, N. Strecker, S. Gappisch, A. Höfler, W. Fichtner
    Pages 162-177
  10. Back Matter
    Pages 196-196

About these proceedings


Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field.


3D graphics RSI algorithms semiconductor devices simulation

Editors and affiliations

  • J. Lorenz
    • 1
  1. 1.BauelementetechnologieFraunhofer-Institut für Integrierte SchaltungenErlangenGermany

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