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Simulation of Semiconductor Devices and Processes

Vol. 6

  • Heiner Ryssel
  • Peter Pichler

Table of contents

  1. Front Matter
    Pages i-xiv
  2. Kevin D. Lucas, Hiroyoshi Tanabe, Chi-Min Yuan, Andrzej J. Strojwas
    Pages 14-17
  3. C. Brisset, F.-X. Musalem, P. Dollfus, P. Hesto
    Pages 26-29
  4. Peter Smeys, Peter B. Griffin, Krishna C. Saraswat
    Pages 42-45
  5. R. Mlekus, Ch. Ledl, E. Strasser, S. Selberherr
    Pages 50-53
  6. K. Wimmer, M. Noell, W. J. Taylor, M. Orlowski
    Pages 54-57
  7. G. Rieger, S. Halama, S. Selberherr
    Pages 58-61
  8. José López-Serrano, Andrzej J. Strojwas
    Pages 62-65
  9. D. W. Yergeau, E. C. Kan, M. J. Gander, R. W. Dutton
    Pages 66-69
  10. Ch. Pichler, N. Khalil, G. Schrom, S. Selberherr
    Pages 70-73
  11. A. Abramo, J. Bude, F. Venturi, M.R. Pinto, E. Sangiorgi
    Pages 106-109
  12. Stephen Cea, Mark Law
    Pages 135-138
  13. M. Fujinaga, T. Kunikiyo, T. Uchida, K. Kamon, N. Kotani, T. Hirao
    Pages 143-146
  14. Hideo Miura, Yasunobu Tanizaki
    Pages 147-150
  15. M. Mukai, T. Tatsumi, N. Nakauchi, T. Kobayashi, K. Koyama, Y. Komatsu et al.
    Pages 151-154
  16. E. M. Buturla, J. Byers, A. Husain, M. Kump, P. Lloyd, R. Manukonda et al.
    Pages 163-165
  17. D. S. Bang, Z. Krivokapic, M. Hohmeyer, J. P. McVittie, K. C. Saraswat
    Pages 166-169
  18. J. Zheng, J. P. McVittie, M. J. Kushner, Z. Krivokapic
    Pages 170-173
  19. A. Kersch, M. Schäfer
    Pages 174-177
  20. Guo-fu Niu, Gang Ruan, Ting-ao Tang
    Pages 190-193
  21. Daniel C. Kerr, Isaak D. Mayergoyz
    Pages 198-201
  22. V. I. Tolstikhin, M. Willander
    Pages 206-209

About these proceedings

Introduction

SISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

Keywords

Sensor complexity development material modeling semiconductor semiconductor devices simulation

Editors and affiliations

  • Heiner Ryssel
    • 1
    • 2
  • Peter Pichler
    • 1
  1. 1.Fraunhofer-Institut für Integrierte SchaltungenErlangenFederal Republic of Germany
  2. 2.Institut für Elektronische BauelementeUniversität Erlangen-NürnbergFederal Republic of Germany

Bibliographic information