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Field-effect Self-mixing Terahertz Detectors

  • Jiandong┬áSun

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xviii
  2. Jiandong Sun
    Pages 1-18
  3. Jiandong Sun
    Pages 107-117
  4. Jiandong Sun
    Pages 119-122
  5. Back Matter
    Pages 123-126

About this book

Introduction

A comprehensive device model considering both spatial distributions of the terahertz field and the field-effect self-mixing factor has been constructed for the first time in the thesis. The author has found that it is the strongly localized terahertz field induced in a small fraction of the gated electron channel that plays an important role in the high responsivity. An AlGaN/GaN-based high-electron-mobility transistor with a 2-micron-sized gate and integrated dipole antennas has been developed and can offer a noise-equivalent power as low as 40 pW/Hz1/2 at 900 GHz. By further reducing the gate length down to 0.2 micron, a noise-equivalent power of 6 pW/Hz1/2 has been achieved. This thesis provides detailed experimental techniques and device simulation for revealing the self-mixing mechanism including a scanning probe technique for evaluating the effectiveness of terahertz antennas. As such, the thesis could be served as a valuable introduction towards further development of high-sensitivity field-effect terahertz detectors for practical applications.

Keywords

Finite-Difference Time-Domain (FDTD) GaN/AlGaN Heterostructure High-Electron-Mobility Transistor (HEMT) Self-Mixing THz Near-Field Optics Terahertz Antenna Terahertz Detector Two-Dimensional Electron System (2DES) Two-Dimensional Plasma Wave

Authors and affiliations

  • Jiandong┬áSun
    • 1
  1. 1.Suzhou Inst. of Nano-tech & Nano-bionicsChinese Academy of Sciences,SuzhouChina

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-662-48681-8
  • Copyright Information Springer-Verlag Berlin Heidelberg 2016
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Engineering
  • Print ISBN 978-3-662-48679-5
  • Online ISBN 978-3-662-48681-8
  • Series Print ISSN 2190-5053
  • Series Online ISSN 2190-5061
  • Buy this book on publisher's site