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Fundamental Physics of Amorphous Semiconductors

Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8—11, 1980

  • Conference proceedings
  • © 1981

Overview

Editors:
  1. Fumiko Yonezawa

    1. Research Institute for Fundamental Physics, Yukawa Hall, Kyoto University, Kyoto 606, Japan

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Part of the book series: Springer Series in Solid-State Sciences (SSSOL, volume 25)

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Table of contents (13 papers)

  1. Front Matter

    Pages I-VIII
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  2. What are Non-Crystalline Semiconductors

    • Hellmut Fritzsche
    Pages 1-13

  3. Defects in Covalent Amorphous Semiconductors

    • David Adler
    Pages 14-32

  4. Surface Effects and Transport Properties in Thin films of Hydrogenated Silicon

    • I. Solomon
    Pages 33-39

  5. The Past, Present and Future of Amorphous Silicon

    • W. E. Spear
    Pages 40-45

  6. Doping and the Density of States of Amorphous Silicon

    • P. G. LeComber
    Pages 46-55

  7. The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon

    • M. H. Brodsky
    Pages 56-71

  8. New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs

    • William Paul
    Pages 72-86

  9. Chemical Bonding of Alloy Atoms in Amorphous Silicon

    • Gerald Lucovsky
    Pages 87-103

  10. Photo-Induced Phenomena in Amorphous Semiconductors

    • Kazunobu Tanaka
    Pages 104-118

  11. Theory of Electronic Properties of Amorphous Semiconductors

    • Fumiko Yonezawa, Morrel H. Cohen
    Pages 119-144

  12. Some Problems of the Electron Theory of Disorderd Semiconductors

    • V. L. Bonch-Bruevich
    Pages 145-154

  13. The Anderson Localisation Problem

    • D. Weaire
    Pages 155-163

  14. Summary Talk

    • Hajimu Kawamura
    Pages 164-165

  15. Back Matter

    Pages 166-184
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Keywords

About this book

The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon­ ductor group in Japan. A few years ago, we started to organize an interna­ tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open.

Editors and Affiliations

  • Research Institute for Fundamental Physics, Yukawa Hall, Kyoto University, Kyoto 606, Japan

    Fumiko Yonezawa

Bibliographic Information

  • Book Title: Fundamental Physics of Amorphous Semiconductors

  • Book Subtitle: Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8—11, 1980

  • Editors: Fumiko Yonezawa

  • Series Title: Springer Series in Solid-State Sciences

  • DOI: https://doi.org/10.1007/978-3-642-81604-8

  • Publisher: Springer Berlin, Heidelberg

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer-Verlag Berlin Heidelberg 1981

  • Softcover ISBN: 978-3-642-81606-2Published: 30 December 2011

  • eBook ISBN: 978-3-642-81604-8Published: 06 December 2012

  • Series ISSN: 0171-1873

  • Series E-ISSN: 2197-4179

  • Edition Number: 1

  • Number of Pages: VIII, 184

  • Number of Illustrations: 5 b/w illustrations

  • Topics: Surfaces and Interfaces, Thin Films

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