Physical Chemistry of, in and on Silicon

  • Gianfranco Cerofolini
  • Laura Meda

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 8)

Table of contents

  1. Front Matter
    Pages I-VIII
  2. Gianfranco Cerofolini, Laura Meda
    Pages 1-7
  3. Gianfranco Cerofolini, Laura Meda
    Pages 8-14
  4. Gianfranco Cerofolini, Laura Meda
    Pages 15-24
  5. Gianfranco Cerofolini, Laura Meda
    Pages 25-32
  6. Gianfranco Cerofolini, Laura Meda
    Pages 33-51
  7. Gianfranco Cerofolini, Laura Meda
    Pages 52-58
  8. Gianfranco Cerofolini, Laura Meda
    Pages 59-69
  9. Gianfranco Cerofolini, Laura Meda
    Pages 70-80
  10. Gianfranco Cerofolini, Laura Meda
    Pages 81-92
  11. Gianfranco Cerofolini, Laura Meda
    Pages 93-103
  12. Back Matter
    Pages 105-122

About this book

Introduction

The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every­ day experience, this choice being dictated merely by their greater knowl­ edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem­ istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem­ istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan­ tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.

Keywords

chemistry defects oxidation physical chemistry silicon surface

Authors and affiliations

  • Gianfranco Cerofolini
    • 1
  • Laura Meda
    • 2
  1. 1.EniChemMilano MIItaly
  2. 2.SGS-Thomson MicroelectronicsAgrate MIItaly

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-73504-2
  • Copyright Information Springer-Verlag Berlin Heidelberg 1989
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-73506-6
  • Online ISBN 978-3-642-73504-2
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • About this book