Picosecond Electronics and Optoelectronics

Proceedings of the Topical Meeting Lake Tahoe, Nevada, March 13–15, 1985

  • Gerard Albert Mourou
  • David M. Bloom
  • Chi-H. Lee

Part of the Springer Series in Electrophysics book series (SSEP, volume 21)

Table of contents

  1. Front Matter
    Pages I-X
  2. Ultrafast Optics and Electronics

    1. Front Matter
      Pages 1-1
    2. D. H. Auston, K. P. Cheung, J. A. Valdmanis, P. R. Smith
      Pages 2-8
    3. Naresh Chand, Hadis Morkoç
      Pages 9-17
    4. R. A. Murphy
      Pages 38-45
    5. B. H. Kolner, K. J. Weingarten, M. J. W. Rodwell, D. M. Bloom
      Pages 50-53
    6. K. E. Meyer, D. R. Dykaar, G. A. Mourou
      Pages 54-57
    7. S. Williamson, G. A. Mourou
      Pages 58-61
    8. Donald E. Cooper, Steven C. Moss
      Pages 62-65
    9. W. R. Eisenstadt, R. B. Hammond, D. R. Bowman, R. W. Dutton
      Pages 66-69
  3. High-Speed Phenomena in Bulk Semiconductors

About these proceedings


Over the past decade, we have witnessed a number of spectacular advances in the fabrication of crystalline semiconductor devices due mainly to the pro­ gress of the different techni ques of heteroepitaxy. The di scovery of two­ dimensional behavior of electrons led to the development of a new breed of ultrafast electronic and optical devices, such as modulation doped FETs, permeable base transistors, and double heterojunction transistors. Comparable progress has been made in the domain of cryoelectronics, ultrashort pulse generation, and ultrafast diagnostics. Dye lasers can generate 8 fs signals after compression, diode lasers can be modulated at speeds close to 20 GHz and electrical signals are characterized with subpicosecond accuracy via the electro-optic effect. Presently, we are experiencing an important interplay between the field of optics and electronics; the purpose of this meeting was to foster and enhance the interaction between the two disciplines. It was logical to start the conference by presenting to the two different audiences, i. e. , electronics and optics, the state-of-the-art in the two res­ pective fields and to highlight the importance of optical techniques in the analysis of physical processes and device performances. One of the leading techniques in this area is the electro-optic sampling technique. This optical technique has been used to characterize transmission lines and GaAs devices. Carrier transport in semiconductors is of fundamental importance and some of its important aspects are stressed in these proceedings.


Transmission development electro-optic effect electronics laser optical devices optics semiconductor semiconductor devices transistor

Editors and affiliations

  • Gerard Albert Mourou
    • 1
  • David M. Bloom
    • 2
  • Chi-H. Lee
    • 3
  1. 1.Department of PhysicsThe University of RochesterRochesterUSA
  2. 2.Edward L. Ginzton LaboratoryStanford UniversityStanfordUSA
  3. 3.Department of Electrical EngineeringUniversity of MarylandCollege ParkUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-70780-3
  • Copyright Information Springer-Verlag Berlin Heidelberg 1985
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-70782-7
  • Online ISBN 978-3-642-70780-3
  • Series Print ISSN 0172-5734
  • About this book