Metal Impurities in Silicon-Device Fabrication

  • Klaus Graff

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 24)

Table of contents

  1. Front Matter
    Pages I-XV
  2. Klaus Graff
    Pages 1-4
  3. Klaus Graff
    Pages 76-130
  4. Klaus Graff
    Pages 131-162
  5. Klaus Graff
    Pages 163-189
  6. Klaus Graff
    Pages 190-200
  7. Klaus Graff
    Pages 201-232
  8. Klaus Graff
    Pages 233-238
  9. Back Matter
    Pages 239-269

About this book

Introduction

Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific properties of the main and rare impurities in silicon are examined, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine the gettering efficiency. In all of these subjects, reliable and up-to-date data are presented. This monograph provides a thorough review of the results of recent scientific investigations, as well as the relevant data and properties of the various metal impurities in silicon. The new edition includes important recent data and a number of new tables.

Keywords

Silicon Device Fabrication X-ray deep level transient spectroscopy defects device fabrication gettering iron metals silicon spectroscopy tables transition metal defects

Authors and affiliations

  • Klaus Graff
    • 1
  1. 1.Telefunken ElectronicHeilbronnGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-57121-3
  • Copyright Information Springer-Verlag Berlin Heidelberg 2000
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-642-62965-5
  • Online ISBN 978-3-642-57121-3
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • About this book