Technology of Gallium Nitride Crystal Growth

  • Dirk Ehrentraut
  • Elke Meissner
  • Michal Bockowski

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 133)

Table of contents

  1. Front Matter
    Pages i-xxi
  2. Market for Bulk GaN Crystals

    1. Front Matter
      Pages 1-1
    2. Andrew D. Hanser, Keith R. Evans
      Pages 3-27
  3. Vapor Phase Growth Technology

    1. Front Matter
      Pages 30-30
    2. Akinori Koukitu, Yoshinao Kumagai
      Pages 31-60
    3. B. Łucznik, B. Pastuszka, G. Kamler, I. Grzegory, S. Porowski
      Pages 61-78
    4. Y. Oshima, T. Yoshida, T. Eri, K. Watanabe, M. Shibata, T. Mishima
      Pages 79-96
    5. Paul T. Fini, Benjamin A. Haskell
      Pages 97-117
    6. K. Matsumoto, H. Tokunaga, A. Ubukata, K. Ikenaga, Y. Fukuda, Y. Yano et al.
      Pages 119-133
  4. Solution Growth Technology

    1. Front Matter
      Pages 136-136
    2. R. Doradziński, R. Dwiliński, J. Garczyński, L. P. Sierzputowski, Y. Kanbara
      Pages 137-160
    3. Tadao Hashimoto, Shuji Nakamura
      Pages 161-182
    4. Dirk Ehrentraut, Yuji Kagamitani
      Pages 183-203
  5. Flux Growth Technology

    1. Front Matter
      Pages 207-207
    2. Michal Boćkowski, Pawel Strąk, Izabella Grzegory, Sylwester Porowski
      Pages 207-234
    3. E. Meissner, S. Hussy, J. Friedrich
      Pages 245-273
  6. Characterization of GaN Crystals

    1. Front Matter
      Pages 277-277
    2. Shigefusa F. Chichibu
      Pages 277-293

About this book

Introduction

This book deals with the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production. Leading experts from industry and academia report in a very comprehensive way on the current state-of-the-art of the growth technologies and optical and structural properties of the GaN crystals are compared.

Keywords

Ammonothermal growth Crystal growth from solution Gallium nitride (GaN) Hydride vapor phase epitaxy (HVPE) Properties of GaN crystal spectroscopy

Editors and affiliations

  • Dirk Ehrentraut
    • 1
  • Elke Meissner
    • 2
  • Michal Bockowski
    • 3
  1. 1.Inst. Materials Research (IMR)Tohoku UniversitySendaiJapan
  2. 2.Integrierte Systeme und, Bauelementetechnologie (IISB)Fraunhofer Institut fürErlangenGermany
  3. 3.Inst. High-Pressure PhysicsPAN WarszawaWarszawaPoland

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-642-04830-2
  • Copyright Information Springer-Verlag Berlin Heidelberg 2010
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-642-04828-9
  • Online ISBN 978-3-642-04830-2
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • About this book