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Wide Bandgap Semiconductors

Fundamental Properties and Modern Photonic and Electronic Devices

  • Kiyoshi Takahashi
  • Akihiko Yoshikawa
  • Adarsh Sandhu

Table of contents

  1. Front Matter
    Pages I-XXV
  2. Akihiko Yoshikawa, Hiroyuki Matsunami, Yasushi Nanishi
    Pages 1-24
  3. Sadafumi Yoshida, Toshimichi Ito, Akio Hiraki, Hiroshi Saito, Shizuo Fujita, Yoshihiro Ishitani et al.
    Pages 25-96
  4. Yoichi Kawakami, Satoshi Kamiyama, Gen-Ichi Hatakoshi, Takashi Mukai, Yukio Narukawa, Ichirou Nomura et al.
    Pages 97-230
  5. Hironobu Miyamoto, Manabu Arai, Hiroshi Kawarada, Naoharu Fujimori, Sadafumi Yoshida, Takashi Shinohe et al.
    Pages 231-280
  6. Hidekazu Kumano, Ikuo Suemune, Katsumi Kishino, Shizuo Fujita, Adarsh Sandhu, Nobuo Suzuki et al.
    Pages 281-327
  7. Noboru Ohtani, Takao Nakamura, Hitoshi Sumiya, Fumio Hasegawa, Seiji Sarayama, Takashi Taniguchi et al.
    Pages 329-445
  8. Back Matter
    Pages 447-460

About this book

Introduction

This book offers a comprehensive overview of the development, current state and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. It includes an overview of recent developments in III-V nitride semiconductors, SiC, diamond, ZnO, II-VI materials and related devices including AIGaN/GaN FET, UV LDs, white light LEDs, and cold electron emitters.

With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

After reviue of the basic physics of WBGS and the relevance of the physical properties to the development of commercial devices, the book addresses the applications of WBGS devices for solid-state white-light illumination, medicine and gigahertz-high power telecommunications. In addition, description of recent development in the growth and applications of nitride semiconductors are complemented by chapters on the properties and device applications of SiC, diamond thin films, doping of ZnO, II-IVs and the novel BeZnSeTe/BAlGaAs material systems. Practical issues and problems such as the effect of defects on device performance are highlighted and solutions proposed based on recent studies.

Keywords

LED UV crystal defects development electronics laser laser diode material optical devices optoelectronics semiconductor tables telecommunications thin films

Editors and affiliations

  • Kiyoshi Takahashi
    • 1
  • Akihiko Yoshikawa
    • 2
  • Adarsh Sandhu
    • 3
  1. 1.The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic DevicesChiba UniversityChibaJapan
  2. 2.The 162nd Committee on Wide Bandgap Semiconductor Photonic and Electronic DevicesChiba UniversityChibaJapan
  3. 3.Tokyo Institute of TechnologyTokyoJapan

Bibliographic information