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Ion Implantation and Synthesis of Materials

  • Book
  • © 2006

Overview

Authors:
  1. Michael Nastasi

    1. Laboratory Fellow and Team Leader Ion-Solid Interaction and Interface Engineering Team, Los Alamos National Laboratory, NM 87545, USA

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    You can also search for this author in PubMed   Google Scholar

  2. James W. Mayer

    1. Center for Solid State Science, Arizona State University, Tempe, USA

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    You can also search for this author in PubMed   Google Scholar

  • Presents the basics and current state of the art in the field of ion implantation-based materials physics
  • Includes supplementary material: sn.pub/extras

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Table of contents (15 chapters)

  1. Front Matter

    Pages i-xiii
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  2. General Features and Fundamental Concepts

    Pages 1-10

  3. Particle Interactions

    Pages 11-21

  4. Dynamics of Binary Elastic Collisions

    Pages 23-36

  5. Cross-Section

    Pages 37-48

  6. Ion Stopping

    Pages 49-61

  7. Ion Range and Range Distribution

    Pages 63-76

  8. Displacements and Radiation Damage

    Pages 77-92

  9. Channeling

    Pages 93-106

  10. Doping, Diffusion and Defects in Ion-Implanted Si

    Pages 107-126

  11. Crystallization and Regrowth of Amorphous Si

    Pages 127-142

  12. Si Slicing and Layer Transfer: Ion-Cut

    Pages 143-158

  13. Surface Erosion During Implantation: Sputtering

    Pages 159-178

  14. Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing

    Pages 179-192

  15. Application of Ion Implantation Techniques in CMOS Fabrication

    Pages 193-211

  16. Ion implantation in CMOS Technology: Machine Challenges

    Pages 213-238

  17. Back Matter

    Pages 239-263
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Keywords

About this book

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Authors and Affiliations

  • Laboratory Fellow and Team Leader Ion-Solid Interaction and Interface Engineering Team, Los Alamos National Laboratory, NM 87545, USA

    Michael Nastasi

  • Center for Solid State Science, Arizona State University, Tempe, USA

    James W. Mayer

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