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Multi-run Memory Tests for Pattern Sensitive Faults

  • Ireneusz Mrozek

Table of contents

  1. Front Matter
    Pages i-x
  2. Ireneusz Mrozek
    Pages 1-4
  3. Ireneusz Mrozek
    Pages 5-13
  4. Ireneusz Mrozek
    Pages 15-28
  5. Ireneusz Mrozek
    Pages 29-36
  6. Ireneusz Mrozek
    Pages 37-62
  7. Ireneusz Mrozek
    Pages 63-85
  8. Ireneusz Mrozek
    Pages 87-100
  9. Ireneusz Mrozek
    Pages 101-120
  10. Back Matter
    Pages 121-135

About this book

Introduction

This book describes efficient techniques for production testing as well as for periodic maintenance testing (specifically in terms of multi-cell faults) in modern semiconductor memory.  The author discusses background selection and address reordering algorithms in multi-run transparent march testing processes. Formal methods for multi-run test generation and many solutions to increase their efficiency are described in detail. All methods presented ideas are verified by both analytical investigations and numerical simulations.

  • Provides the first book related exclusively to the problem of multi-cell fault detection by multi-run tests in memory testing process;
  • Presents practical algorithms for design and implementation of efficient multi-run tests;
  • Demonstrates methods verified by analytical and experimental investigations.

Keywords

test methods and hardware design RAM testing memory diagnostics multi-run memory testing software testing

Authors and affiliations

  • Ireneusz Mrozek
    • 1
  1. 1.Bialystok University of TechnologyBialystokPoland

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-319-91204-2
  • Copyright Information Springer International Publishing AG, part of Springer Nature 2019
  • Publisher Name Springer, Cham
  • eBook Packages Engineering
  • Print ISBN 978-3-319-91203-5
  • Online ISBN 978-3-319-91204-2
  • Buy this book on publisher's site