Overview
- Comprehensively describes established and novel concepts for time-to-failure modeling of low permittivity, nano-porous dielectric films
- Introduces key concepts from reliability engineering combined with the latest developments in interconnect design
- Covers concepts essential to predicting the lifetime of interconnect systems manufactured using sub 14nm process technology
- Includes supplementary material: sn.pub/extras
Part of the book series: SpringerBriefs in Materials (BRIEFSMATERIALS)
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Table of contents (9 chapters)
Keywords
- Chip Interconnects
- Dielectric Breakdown
- Interconnect Reliability Science
- Low-k Interconnect
- Metal Catalyzed Dielectric Failure
- Nanoporous Dielectrics
- Reliability of Gigascale Electronics
- Reliability of Modern Porous Low-k Films
- TDDB for Gigascale Electronic Devices
- TDDB in Modern Interconnects
- Time-dependent-dielectric-breakdown (TDDB)
About this book
Authors and Affiliations
Bibliographic Information
Book Title: Dielectric Breakdown in Gigascale Electronics
Book Subtitle: Time Dependent Failure Mechanisms
Authors: Juan Pablo Borja, Toh-Ming Lu, Joel Plawsky
Series Title: SpringerBriefs in Materials
DOI: https://doi.org/10.1007/978-3-319-43220-5
Publisher: Springer Cham
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: The Author(s) 2016
Softcover ISBN: 978-3-319-43218-2Published: 26 September 2016
eBook ISBN: 978-3-319-43220-5Published: 16 September 2016
Series ISSN: 2192-1091
Series E-ISSN: 2192-1105
Edition Number: 1
Number of Pages: VIII, 105
Number of Illustrations: 41 b/w illustrations, 33 illustrations in colour
Topics: Optical and Electronic Materials, Nanotechnology and Microengineering, Electronic Circuits and Devices, Nanotechnology