Overview
- Provides accurate information on thermophysical properties of semiconductor melts for the quantitative descriptions of the process of crystal growth from melt
- Shows analysis of changes in thermophysical properties during cooling of the melt which can provide information about structural transitions of the melt during the solidification process
- Reviews the current understanding of the phenomena, especially heat and mass transfer in the melts
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About this book
This book reviews the experimental measurements of density, thermal conductivity, viscosity, and electrical conductivity on the binary, pseudo-binary melts of the most advanced IR-detector material systems of HgCdTe and HgZnTe as well as the theoretical analyses of these results. The time-dependent measurements on the relaxation behavior of the thermophysical properties during rapid cooling of the melts were also performed to elucidate the characteristics of the structural fluctuation and transition of the melts.
The author shows his research results which extend understanding of the solidification process in order to interpret and improve the experimental results of crystal growth and enhances the fundamental knowledge of heterophase fluctuations phenomena in the melts so as to improve the melt growth processes of all the semiconductor systems.
An in-depth study on the thermophysical properties and their time-dependent structural dynamic processes taking place in the vicinity of the solid-liquid phase transition of the narrow homogeneity range HgTe-based ternary semiconductors as well as the structural analysis of the alloy homogenization process in the melt is needed to understand and to improve the crystal growth processes.
This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors. The theory of heterophase fluctuations of liquids is applicable to any many-body systems including condensed-matter physics and field theory.
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Table of contents (7 chapters)
Authors and Affiliations
About the author
Dr. Ching-Hua Su is a Materials Scientist at NASA/George C. Marshall Space Flight Center, Huntsville, Alabama, USA.
Bibliographic Information
Book Title: Physics and Chemistry of Te and HgTe-based Ternary Semiconductor Melts
Authors: Ching-Hua Su
DOI: https://doi.org/10.1007/978-3-030-75586-7
Publisher: Springer Cham
eBook Packages: Physics and Astronomy, Physics and Astronomy (R0)
Copyright Information: This is a U.S. government work and not under copyright protection in the U.S.; foreign copyright protection may apply 2021
Hardcover ISBN: 978-3-030-75585-0Published: 12 June 2021
Softcover ISBN: 978-3-030-75588-1Published: 12 June 2022
eBook ISBN: 978-3-030-75586-7Published: 10 June 2021
Edition Number: 1
Number of Pages: XVII, 134
Number of Illustrations: 72 b/w illustrations, 15 illustrations in colour
Topics: Semiconductors, Characterization and Evaluation of Materials, Materials Engineering, Particle Acceleration and Detection, Beam Physics