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© 2020

Noise in Nanoscale Semiconductor Devices

  • Tibor Grasser

Benefits

  • Describes the state-of-the-art, regarding noise in nanometer semiconductor devices

  • Enables readers to design more reliable semiconductor devices

  • Offers the most up-to-date information on point defects, based on physical microscopic models

Book

Table of contents

  1. Front Matter
    Pages i-vi
  2. Christoforos Theodorou, Gérard Ghibaudo
    Pages 33-85
  3. Carlos Marquez, Oscar Huerta, Adrian I. Tec-Chim, Fernando Guarin, Edmundo A. Gutierrez-D, Francisco Gamiz
    Pages 135-174
  4. Steve S. Chung, E. R. Hsieh
    Pages 175-200
  5. Alessandro S. Spinelli, Christian Monzio Compagnoni, Andrea L. Lacaita
    Pages 201-227
  6. Bernhard Stampfer, Alexander Grill, Michael Waltl
    Pages 229-257
  7. Kazutoshi Kobayashi, Mahfuzul Islam, Takashi Matsumoto, Ryo Kishida
    Pages 285-333
  8. Mengwei Si, Xuefei Li, Wangran Wu, Sami Alghamdi, Peide Ye
    Pages 335-357
  9. Alok Ranjan, Nagarajan Raghavan, Kalya Shubhakar, Sean Joseph O’Shea, Kin Leong Pey
    Pages 417-440
  10. F. Adamu-Lema, C. Monzio Compagnoni, O. Badami, V. Georgiev, A. Asenov
    Pages 441-466
  11. J. Martin-Martinez, R. Rodriguez, M. Nafria
    Pages 467-493
  12. Thiago H. Both, Maurício Banaszeski da Silva, Gilson I. Wirth, Hans P. Tuinhout, Adrie Zegers-van Duijnhoven, Jeroen A. Croon et al.
    Pages 495-516
  13. Pieter Weckx, Ben Kaczer, Marko Simicic, Bertrand Parvais, Dimitri Linten
    Pages 517-552
  14. A. S. M. Shamsur Rouf, Zeynep Çelik-Butler
    Pages 553-607
  15. Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Yannick Wimmer, Michael Waltl, Tibor Grasser
    Pages 609-648

About this book

Introduction

This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices.  Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models.  Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects.

  • Describes the state-of-the-art, regarding noise in nanometer semiconductor devices;
  • Enables readers to design more reliable semiconductor devices;
  • Offers the most up-to-date information on point defects, based on physical microscopic models.

Keywords

Random Telegraph Signals in Semiconductor Devices Low-Frequency Noise in Advanced MOS Devices Noise in Semiconductor Devices Noise Analysis Noise Simulation

Editors and affiliations

  • Tibor Grasser
    • 1
  1. 1.Institute for MicroelectronicsTechnische Universität WienWienAustria

About the editors

Prof. Tibor Grasser is an IEEE Fellow and has been the head of the Institute for Microelectronics since 2016. He has edited various books, e.g. on advanced device modeling (World Scientific), the bias temperature instability (Springer) and hot carrier degradation (Springer), is a distinguished lecturer of the IEEE EDS, is a recipient of the Best and Outstanding Paper Awards at IRPS (2008, 2010, 2012, and 2014), IPFA (2013 and 2014), ESREF (2008) and the IEEE EDS Paul Rappaport Award (2011). He currently serves as an Associate Editor for the IEEE Transactions on Electron Devices following his assignment as Associate Editor for Microelectronics Reliability (Elsevier) and has been involved in various outstanding conferences such as IEDM, IRPS, SISPAD, ESSDERC, and IIRW. Prof. Grasser's current research interests include theoretical modeling of performance aspects of 2D and 3D devices (charge trapping, reliability), starting from the ab initio level over more efficient quantum-mechanical descriptions up to TCAD modeling. The models developed in his group have been made available in the most important commercial TCAD environments.

Bibliographic information