Charged Semiconductor Defects

Structure, Thermodynamics and Diffusion

  • Edmund G. Seebauer
  • Meredith C. Kratzer

Part of the Engineering Materials and Processes book series (EMP)

Table of contents

About this book

Introduction

The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication.

Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors.

Features:

  • Group IV, III-V, and oxide semiconductors;
  • Intrinsic and extrinsic defects; and,
  • Point defects, as well as defect pairs, complexes and clusters.

A crucial reference for materials scientists, surface scientists, electrical engineers, and solid-state physicists looking to approach the topic of defect charging from an integrated chemical engineering perspective. Researchers and industrial practitioners alike will find its content invaluable for device and process optimization.

Keywords

Catalysis Defect Diffusion Microelectronics SRUS Semiconductor Sensor thermodynamics transistor

Authors and affiliations

  • Edmund G. Seebauer
    • 1
  • Meredith C. Kratzer
    • 1
  1. 1.Department of Chemical and Biomolecular EngineeringUniversity of Illinois at Urbana-ChampaignUrbanaUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-84882-059-3
  • Copyright Information Springer London 2009
  • Publisher Name Springer, London
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-1-84882-058-6
  • Online ISBN 978-1-84882-059-3
  • Series Print ISSN 1619-0181
  • About this book