Granular Nanoelectronics

  • David K. Ferry
  • John R. Barker
  • Carlo Jacoboni

Part of the NATO ASI Series book series (NSSB, volume 251)

Table of contents

  1. Front Matter
    Pages i-xii
  2. Lectures

    1. Fausto Rossi, Rossella Brunetti, Carlo Jacoboni
      Pages 43-61
    2. Alan B. Fowler
      Pages 63-66
    3. Mark A. Reed, John N. Randall, James H. Luscombe
      Pages 79-83
    4. Jörg P. Kotthaus
      Pages 85-102
    5. Kenji Taniguchi, Chihiro Hamaguchi
      Pages 103-132
    6. Lino Reggiani, Patrizia Poli, Lucio Rota
      Pages 145-153
    7. E. Gornik, J. Smoliner, F. Hirler, G. Weimann
      Pages 155-164
    8. T. J. Thornton, M. L. Roukes, A. Scherer, B. P. Van der Gaag
      Pages 165-179
    9. M. Büttiker
      Pages 181-194
    10. A. Szafer, A. Douglas Stone, P. L. McEuen, B. W. Alphenaar
      Pages 195-222
    11. V. Pevzner, F. Sols, Karl Hess
      Pages 223-253
    12. F. Kuchar, J. Lutz, K. Y. Lim, R. Meisels, G. Weimann, W. Schlapp et al.
      Pages 277-286
    13. Lino Reggiani, Tilmann Kuhn
      Pages 287-295

About this book

Introduction

The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.

Keywords

electron electronics microelectronics nanoelectronics quantum wire semiconductor semiconductor device semiconductor devices tunneling

Editors and affiliations

  • David K. Ferry
    • 1
  • John R. Barker
    • 2
  • Carlo Jacoboni
    • 3
  1. 1.Arizona State UniversityTempeUSA
  2. 2.University of GlasgowGlasgowScotland, UK
  3. 3.University of ModenaModenaItaly

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4899-3689-9
  • Copyright Information Springer-Verlag US 1991
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4899-3691-2
  • Online ISBN 978-1-4899-3689-9
  • Series Print ISSN 0258-1221
  • About this book