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Granular Nanoelectronics

  • Book
  • © 1991

Overview

Editors:
  1. David K. Ferry

    1. Arizona State University, Tempe, USA

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  2. John R. Barker

    1. University of Glasgow, Glasgow, Scotland, UK

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    You can also search for this editor in PubMed   Google Scholar

  3. Carlo Jacoboni

    1. University of Modena, Modena, Italy

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Part of the book series: NATO Science Series B: (NSSB, volume 251)

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Table of contents (51 chapters)

  1. Front Matter

    Pages i-xii
    Download chapter PDF

  2. Lectures

    1. Lateral Surface Superlattices and the Future of ULSI Microelectronics

      • David K. Ferry
      Pages 1-18

    2. Introduction to Quantum Transport in Electron Waveguides

      • J. R. Barker
      Pages 19-41

    3. An Introduction to Charge Quantum Transport in Semiconductors and Numerical Approaches

      • Fausto Rossi, Rossella Brunetti, Carlo Jacoboni
      Pages 43-61

    4. Interference Devices

      • Alan B. Fowler
      Pages 63-66

    5. Nanofabrication and Optical Assessment of Quantum Wires and Dots

      • Steven P. Beaumont
      Pages 67-78

    6. Non-Equilibrium Quantum Dot Transport

      • Mark A. Reed, John N. Randall, James H. Luscombe
      Pages 79-83

    7. Field-Effect Controlled Surface Superlattices

      • Jörg P. Kotthaus
      Pages 85-102

    8. Non-Equilibrium Carrier Transport in Small Structures

      • Kenji Taniguchi, Chihiro Hamaguchi
      Pages 103-132

    9. Nonequilibrium Green Function Techniques Applied to Hot-Electron Quantum Transport

      • Antti-Pekka Jauho
      Pages 133-144

    10. Monte Carlo Algorithms for Quantum Transport

      • Lino Reggiani, Patrizia Poli, Lucio Rota
      Pages 145-153

    11. Tunneling Between Constrained Dimensionality Systems

      • E. Gornik, J. Smoliner, F. Hirler, G. Weimann
      Pages 155-164

    12. Granularity in Narrow Wires: Conductance Fluctuations, Diffuse Boundaries and Junction Scattering

      • T. J. Thornton, M. L. Roukes, A. Scherer, B. P. Van der Gaag
      Pages 165-179

    13. Thermal and Shot Noise in Open Conductors

      • M. Büttiker
      Pages 181-194

    14. Network Models of the Quantum Hall Effect

      • A. Szafer, A. Douglas Stone, P. L. McEuen, B. W. Alphenaar
      Pages 195-222

    15. Approaches to Quantum Transport in Semiconductor Nanostructures

      • V. Pevzner, F. Sols, Karl Hess
      Pages 223-253

    16. Weak Localization and Phase Breaking Mechanisms of Electron Waves in Quasi One-Dimensional Wires

      • Toshiaki Ikoma, Toshiro Hiramoto
      Pages 255-275

    17. Microwave Studies of Quasi-One Dimensional Wires

      • F. Kuchar, J. Lutz, K. Y. Lim, R. Meisels, G. Weimann, W. Schlapp et al.
      Pages 277-286

    18. Noise in Small and Ultra-Small Geometries

      • Lino Reggiani, Tilmann Kuhn
      Pages 287-295

    19. Dephasing and Non-Dephasing Collisions in Nanostructures

      • A. J. Leggett
      Pages 297-311
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Keywords

About this book

The technological means now exists for approaching the fundamentallimiting scales of solid state electronics in which a single carrier can, in principle, represent a single bit in an information flow. In this light, the prospect of chemically, or biologically, engineered molccular-scale structures which might support information processing functions has enticed workers for many years. The one common factor in all suggested molecular switches, ranging from the experimentally feasible proton-tunneling structure, to natural systems such as the micro-tubule, is that each proposed structure deals with individual information carrying entities. Whereas this future molecular electronics faces enormous technical challenges, the same Iimit is already appearing in existing semiconducting quantum wires and small tunneling structures, both superconducting and normal meta! devices, in which the motion of a single eh arge through the tunneling barrier can produce a sufficient voltage change to cut-off further tunneling current. We may compare the above situation with today's Si microelectronics, where each bit is encoded as a very !arge number, not necessarily fixed, of electrons within acharge pulse. The associated reservoirs and sinks of charge carriers may be profitably tapped and manipulated to proviele macro-currents which can be readily amplified or curtailed. On the other band, modern semiconductor ULSI has progressed by adopting a linear scaling principle to the down-sizing of individual semiconductor devices.

Editors and Affiliations

  • Arizona State University, Tempe, USA

    David K. Ferry

  • University of Glasgow, Glasgow, Scotland, UK

    John R. Barker

  • University of Modena, Modena, Italy

    Carlo Jacoboni

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