Thin Film Growth Techniques for Low-Dimensional Structures

1. Front Matter

   Pages i-ix

   PDF

2. Introduction

   1. Introduction

      • R. F. C. Farrow, S. S. P. Parkin, P. J. Dobson, J. H. Neave, A. S. Arrott

      Pages 1-3

3. Growth of Low-Dimensional Structures in Semiconductors

   1. Effect of Barrier Configuration and Interface Quality on Structural and Electronic Properties of MBE-Grown AlxGa1-xAs/GaAs, AlxGa1-xSb/GaSb and AlxIn1-xAs/GaxIn1-xAs Superlattices

      • K. Ploog, W. Stolz, L. Tapfer

      Pages 5-18

   2. Dynamic RHEED Techniques and Interface Quality in MBE-Grown GaAs/(Al,Ga)As Structures

      • B. A. Joyce, J. H. Neave, J. Zhang, P. J. Dobson, P. Dawson, K. J. Moore et al.

      Pages 19-35

   3. Molecular Beam Epitaxial Growth Kinetics, Mechanism(s) and Interface Formation: Computer Simulations and Experiments

      • Anupam Madhukar

      Pages 37-67

   4. Diffraction Studies of Epitaxy: Elastic, Inelastic and Dynamic Contributions to RHEED

      • P. I. Cohen, P. R. Pukite, S. Batra

      Pages 69-94

   5. Some Aspects of RHEED Theory

      • P. A. Maksym

      Pages 95-113

   6. Superlattices and Superstructures Grown by MOCVD

      • Naozo Watanabe, Yoshifumi Mori, Hiroji Kawai

      Pages 115-136

   7. Growth of Indium Phosphide/Indium Gallium Arsenide Structures by MOCVD Using an Atmospheric Pressure Reactor

      • S. J. Bass, S. J. Barnett, G. T. Brown, N. G. Chew, A. G. Cullis, M. S. Skolnick et al.

      Pages 137-150

   8. MOCVD Growth of Narrow GAP Low Dimensional Structures

      • M. Razeghi

      Pages 151-169

   9. The Preparation of Modulated Semiconductor Structures by Liquid Phase Epitaxy

      • E. Bauser

      Pages 171-194

   10. Growth and Structure of Compositionally Modulated Amorphous Semiconductor Superlattices and Heterojunctions

       • L. Yang, B. Abeles

       Pages 195-219

   11. Atomic Layer Epitaxy of Compound Semiconductors

       • Markus Pessa

       Pages 221-223

   12. Reflection High-Energy Electron Diffraction Intensity Oscillation — An Effective Tool of Si and GexSi1-x Molecular Beam Epitaxy

       • Tsunenori Sakamoto, Kunihiro Sakamoto, Satoru Nagao, Gen Hashiguchi, Katsuya Kuniyoshi, Yoshio Bando

       Pages 225-245

   13. RHEED Intensity Oscillations and the Epitaxial Growth of Quasi-2d Magnetic Semiconductors

       • L. A. Kolodziejski, R. L. Gunshor, A. V. Nurmikko, N. Otsuka

       Pages 247-260

4. Growth of Low-Dimensional Metallic Structures

   1. Magnetic Interface Preparation and Analysis

      • Ulrich Gradmann, Marek Przybylski

      Pages 261-285

   2. Increased Magnetic Moments in Transition Elements Through Epitaxy

      • A. S. Arrott, B. Heinrich, C. Liu, S. T. Purcell

      Pages 287-309

   3. Growth and Characterization of Magnetic Transition Metal Overlayers on GaAs Substrates

      • G. A. Prinz

      Pages 311-318

   4. Metal Semiconductor Interfaces: The Role of Structure and Chemistry

      • R. Ludeke

      Pages 319-335

   5. Synthesis of Rare Earth Films and Superlattices

      • J. Kwo

      Pages 337-360

This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.

• Epitaxy
• Helium-Atom-Streuung
• RHEED
• material
• semiconductor
• thin films

• IBM Almaden Research Center, San Jose, USA

  R. F. C. Farrow, S. S. P. Parkin

• Philips Research Laboratories, Surrey, UK

  P. J. Dobson, J. H. Neave

• Simon Fraser University, Burnaby, Canada

  A. S. Arrott

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