Point and Extended Defects in Semiconductors

  • G. Benedek
  • A. Cavallini
  • W. Schröter

Part of the NATO ASI Series book series (NSSB, volume 202)

Table of contents

  1. Front Matter
    Pages i-x
  2. Basic Properties of Defects and Their Interactions

    1. E. R. Weber, K. Khachaturyan, M. Hoinkis, M. Kaminska
      Pages 39-50
    2. P. Haasen, U. Jendrich, D. Laszig
      Pages 65-75
    3. W. Schröeter, R. Kuehnapfel
      Pages 95-104
    4. S. Pizzini, F. Borsani, A. Sandrinelli, D. Narducci, F. Allegretti
      Pages 105-121
  3. Defect Imaging and Spectroscopy

About this book

Introduction

The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an­ swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char­ acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in­ creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo­ rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Keywords

Semiconductor defects electron microscopy integrated circuit material optical properties physics quantum wells spectroscopy superlattice transmission electron microscopy tunneling

Editors and affiliations

  • G. Benedek
    • 1
  • A. Cavallini
    • 2
  • W. Schröter
    • 3
  1. 1.Università degli Studi di MilanoMilanItaly
  2. 2.Università degli Studi di BolognaBolognaItaly
  3. 3.University of GöttingenGöttingenFederal Republic of Germany

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4684-5709-4
  • Copyright Information Springer-Verlag US 1989
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4684-5711-7
  • Online ISBN 978-1-4684-5709-4
  • Series Print ISSN 0258-1221
  • About this book