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Theory of Transport Properties of Semiconductor Nanostructures

  • Eckehard Schöll

Part of the Electronic Materials Series book series (EMAT, volume 4)

Table of contents

  1. Front Matter
    Pages i-x
  2. Eckehard Schöll
    Pages 1-25
  3. Massimo Rudan, Martino Lorenzini, Rossella Brunetti
    Pages 27-57
  4. C. Jacoboni, R. Brunetti, P. Bordone
    Pages 59-101
  5. P. Vogl, G. Zandler, A. Rein, M. Saraniti
    Pages 103-126
  6. A. P. Jauho
    Pages 127-171
  7. M. Büttiker, T. Christen
    Pages 215-248
  8. Back Matter
    Pages 387-391

About this book

Introduction

Recent advances in the fabrication of semiconductors have created almost un­ limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec­ trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef­ fects. This book, which appears in the electronic materials series, presents an over­ view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au­ tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.

Keywords

material nanostructure quantum wells semiconductor semiconductor device simulation superlattice

Editors and affiliations

  • Eckehard Schöll
    • 1
  1. 1.Institut für Theoretische PhysikTechnische Universität BerlinGermany

Bibliographic information