The Physics of Submicron Lithography

  • Kamil A. Valiev

Part of the Microdevices book series (MDPF)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Kamil A. Valiev
    Pages 1-5
  3. Kamil A. Valiev
    Pages 181-300
  4. Kamil A. Valiev
    Pages 301-394
  5. Kamil A. Valiev
    Pages 395-463
  6. Back Matter
    Pages 491-493

About this book

Introduction

This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop­ erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.

Keywords

Cross section X-ray electron electrons physics

Authors and affiliations

  • Kamil A. Valiev
    • 1
  1. 1.Academy of Sciences of the USSRMoscowUSSR

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4615-3318-4
  • Copyright Information Plenum Press, New York 1992
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4613-6461-0
  • Online ISBN 978-1-4615-3318-4
  • About this book