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Silicon-based Nanomaterials

  • Handong Li
  • Jiang Wu
  • Zhiming M. Wang

Part of the Springer Series in Materials Science book series (SSMATERIALS, volume 187)

Table of contents

  1. Front Matter
    Pages i-xii
  2. Madhuri Thakur, Roderick Pernites, Steve L. Sinsabaugh, Michael S. Wong, Sibani L. Biswal
    Pages 1-23
  3. Jeong Il Oh, Wenfu Liu, Weiqiang Xie, Wenzhong Shen
    Pages 45-66
  4. A. Morales Sánchez, J. Barreto, C. Domínguez Horna, M. Aceves Mijares, J. A. Luna López, L. Licea Jiménez
    Pages 119-138
  5. Hung-Chung Hsueh, Guang-Yu Guo, Steven G. Louie
    Pages 139-159
  6. Jinghua Fang, Igor Levchenko, Morteza Aramesh, Amanda E. Rider, Steven Prawer, Kostya (Ken) Ostrikov
    Pages 161-178
  7. Jyoti Prakash, Sunil Kumar Ghosh, Dakshinamoorthy Sathiyamoorthy
    Pages 179-213
  8. Sudhanshu Choudhary, S. Qureshi
    Pages 243-264
  9. Stefano Sanguinetti, Sergio Bietti, Giovanni Isella
    Pages 327-356
  10. Ricarda Maria Kemper, Donat Josef As, Jörg K. N. Lindner
    Pages 381-405
  11. Back Matter
    Pages 407-409

About this book

Introduction

A variety of nanomaterials have excellent optoelectronic and electronic properties for novel device applications. At the same time, and with advances in silicon integrated circuit (IC) techniques, compatible Si-based nanomaterials hold promise of applying the advantages of nanomaterials to the conventional IC industry. This book focuses not only on silicon nanomaterials, but also summarizes up-to-date developments in the integration of non-silicon nanomaterials on silicon. The book showcases the work of leading researchers from around the world who address such key questions as: Which silicon nanomaterials can give the desired optical, electrical, and structural properties, and how are they prepared? What nanomaterials can be integrated on to a silicon substrate and how is this accomplished? What Si-based nanomaterials may bring a breakthrough in this field? These questions address the practical issues associated with the development of nanomaterial-based devices in applications areas such as solar cells, luminous devices for optical communication (detectors, lasers), and high mobility transistors. Investigation of silicon-based nanostructures is of great importance to make full use of nanomaterials for device applications. Readers will receive a comprehensive view of Si-based nanomaterials, which will hopefully stimulate interest in developing novel nanostructures or techniques to satisfy the requirements of high performance device applications. The goal is to make nanomaterials the main constituents of the high performance devices of the future.

  • Describes today’s most promising approach to the full use of nanomaterials in device applications
  • Provides the keys to understanding the integration of nanomaterials with silicon ICs
  • Addresses both materials growth and properties
  • Covers both silicon and non-silicon nanomaterials
  • Written by leading experts in each research area

Keywords

Array Thin-film Solar Cells Cubic GaN on Nano-patterned 3C-SiC/Si (001) Substrates GaN on Nano-patterned 3C-SiC/Si (001) Substrates High Performance Lithium Ion Battery Anodes High-efficiency Photonic Crystal Si Nano-pillar Lithium Storage Silicon Nanostructures Quantum Dot Si and III-Nitride based Nanocale Heterojunction Devices SiC Nanowires with Controlled Morphology Silicon Silicon Carbide Nanostructures Silicon Carbide Nanotubes, Boron and Nitrogen Impurities Silicon Carbo Nitride Nanocomposite and Multilayered Coatings Silicon Devices Silicon Nanoparticles-based Light Emitting Capacitors Silicon Nanowires Light Trapping Silicon-based Nanomaterials Silicon-carbide Nanostructures Plasma-enabled Transition Metal Silicides NanostructuresCubic

Editors and affiliations

  • Handong Li
    • 1
  • Jiang Wu
    • 2
  • Zhiming M. Wang
    • 3
  1. 1.cState Key Laboratory of ElectronicUniversity of Electronic Science and Technology of ChinaChengduPeople's Republic of China
  2. 2.State Key Laboratory of Electronic ThinUniversity of Electronic Science and Technology of ChinaChengduPeople's Republic of China
  3. 3.State Key Laboratory of ElectronicUniversity of Electronic Science and TechnologyChengduPeople's Republic of China

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4614-8169-0
  • Copyright Information Springer Science+Business Media New York 2013
  • Publisher Name Springer, New York, NY
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-1-4614-8168-3
  • Online ISBN 978-1-4614-8169-0
  • Series Print ISSN 0933-033X
  • Series Online ISSN 2196-2812
  • Buy this book on publisher's site