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Bias Temperature Instability for Devices and Circuits

  • Book
  • © 2014

Overview

Editors:
  1. Tibor Grasser

    1. Institute for Microelectronics, Technische Universität Wien, Wien, Austria

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  • Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics
  • Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence
  • Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs
  • Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior
  • Includes supplementary material: sn.pub/extras

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Table of contents (30 chapters)

  1. Front Matter

    Pages i-xi
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  2. Part I

    1. Front Matter

      Pages 1-1
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    2. Bias Temperature Instability Characterization Methods

      • Andreas Kerber, Eduard Cartier
      Pages 3-31

    3. Application of On-Chip Device Heating for BTI Investigations

      • Thomas Aichinger, Gregor Pobegen, Michael Nelhiebel
      Pages 33-51

    4. Statistical Characterization of BTI-Induced High-k Dielectric Traps in Nanoscale Transistors

      • Tahui Wang, Jung-Piao Chiu, Yu-Heng Liu
      Pages 53-74

    5. The Time-Dependent Defect Spectroscopy

      • Hans Reisinger
      Pages 75-109

    6. Analysis of Oxide Traps in Nanoscale MOSFETs using Random Telegraph Noise

      • David J. Frank, Hiroshi Miki
      Pages 111-134

    7. BTI-Induced Statistical Variations

      • Stewart E. Rauch III
      Pages 135-160

    8. Statistical Distribution of Defect Parameters

      • B. Kaczer, M. Toledano-Luque, J. Franco, P. Weckx
      Pages 161-176

    9. Atomic-Scale Defects Associated with the Negative Bias Temperature Instability

      • Jason P. Campbell, Patrick M. Lenahan
      Pages 177-228

    10. Charge Properties of Paramagnetic Defects in Semiconductor/Oxide Structures

      • V. V. Afanas’ev, M. Houssa, A. Stesmans
      Pages 229-252

    11. Oxide Defects

      • Jian F. Zhang
      Pages 253-285

    12. Understanding Negative-Bias Temperature Instability from Dynamic Stress Experiments

      • Diing Shenp Ang
      Pages 287-302

  3. Part II

    1. Front Matter

      Pages 303-303
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    2. Atomistic Modeling of Defects Implicated in the Bias Temperature Instability

      • Al-Moatasem El-Sayed, Alexander L. Shluger
      Pages 305-321

    3. Statistical Study of Bias Temperature Instabilities by Means of 3D “Atomistic” Simulation

      • Salvatore Maria Amoroso, Louis Gerrer, Fikru Adamu-Lema, Stanislav Markov, Asen Asenov
      Pages 323-348

    4. A Comprehensive Modeling Framework for DC and AC NBTI

      • Souvik Mahapatra
      Pages 349-378

    5. On the Microscopic Limit of the RD Model

      • Franz Schanovsky, Tibor Grasser
      Pages 379-408

    6. Advanced Modeling of Oxide Defects

      • Wolfgang Goes, Franz Schanovsky, Tibor Grasser
      Pages 409-446

    7. The Capture/Emission Time Map Approach to the Bias Temperature Instability

      • Tibor Grasser
      Pages 447-481
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Keywords

About this book

This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Editors and Affiliations

  • Institute for Microelectronics, Technische Universität Wien, Wien, Austria

    Tibor Grasser

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