Designing TSVs for 3D Integrated Circuits

  • Nauman Khan
  • Soha Hassoun

Part of the SpringerBriefs in Electrical and Computer Engineering book series (BRIEFSELECTRIC)

Table of contents

  1. Front Matter
    Pages i-x
  2. Nauman Khan, Soha Hassoun
    Pages 1-5
  3. Nauman Khan, Soha Hassoun
    Pages 7-14
  4. Nauman Khan, Soha Hassoun
    Pages 15-26
  5. Nauman Khan, Soha Hassoun
    Pages 27-41
  6. Nauman Khan, Soha Hassoun
    Pages 43-51
  7. Nauman Khan, Soha Hassoun
    Pages 53-62
  8. Nauman Khan, Soha Hassoun
    Pages 63-65
  9. Back Matter
    Pages 67-76

About this book


This book explores the challenges and presents best strategies for designing Through-Silicon Vias (TSVs) for 3D integrated circuits.  It describes a novel technique to mitigate TSV-induced noise, the GND Plug, which is superior to others adapted from 2-D planar technologies, such as a backside ground plane and traditional substrate contacts. The book also investigates, in the form of a comparative study, the impact of TSV size and granularity, spacing of C4 connectors, off-chip power delivery network, shared and dedicated TSVs, and coaxial TSVs on the quality of power delivery in 3-D ICs. The authors provide detailed best design practices for designing 3-D power delivery networks.  Since TSVs occupy silicon real-estate and impact device density, this book provides four iterative algorithms to minimize the number of TSVs in a power delivery network. Unlike other existing methods, these algorithms can be applied in early design stages when only functional block- level behaviors and a floorplan are available. Finally, the authors explore the use of Carbon Nanotubes for power grid design as a futuristic alternative to Copper.


3D ICs 3D Integrated Circuits Carbon Nanotubes in 3D ICs Power delivery in 3D ICs TSV-induced noise TSVs Three Dimensional Integrated Circuits Through-Silicon Vias

Authors and affiliations

  • Nauman Khan
    • 1
  • Soha Hassoun
    • 2
  1. 1.Tufts UniversityMedfordUSA
  2. 2., Department of Computer ScienceTufts UniversityMedfordUSA

Bibliographic information

  • DOI
  • Copyright Information The Authors 2013
  • Publisher Name Springer, New York, NY
  • eBook Packages Engineering Engineering (R0)
  • Print ISBN 978-1-4614-5507-3
  • Online ISBN 978-1-4614-5508-0
  • Series Print ISSN 2191-8112
  • Series Online ISSN 2191-8120
  • Buy this book on publisher's site