Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

  • Osamu Ueda
  • Stephen J. Pearton

Table of contents

  1. Front Matter
    Pages i-xv
  2. Materials Issues and Reliability of Optical Devices

  3. Materials Issues and Reliability of Electron Devices

    1. Front Matter
      Pages 317-317
    2. William J. Roesch
      Pages 319-379
    3. Min Chu, Andrew D. Koehler, Amit Gupta, Srivatsan Parthasarathy, Mehmet Onur Baykan, Scott E. Thompson et al.
      Pages 381-429
    4. E. A. Douglas, L. Liu, C. F. Lo, B. P. Gila, F. Ren, Stephen J. Pearton
      Pages 431-453
    5. F. Ren, Stephen J. Pearton, B. P. Gila, C. R. Abernathy, R. C. Fitch
      Pages 475-513
    6. M. E. Law, M. Griglione, E. Patrick, N. Rowsey, D. Horton
      Pages 515-544
    7. Sukwon Choi, Samuel Graham, Eric Heller, Donald Dorsey
      Pages 545-582
    8. Yoshino K. Fukai, Kenji Kurishima
      Pages 583-610
  4. Back Matter
    Pages 611-616

About this book


Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature.

The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability.  Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Provides the first handbook to cover all aspects of compound semiconductor device reliability

Systematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000

Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices

Includes experimental approaches in reliability studies

Presents case studies of laser degradation and HEMT degradation


AlGaN/GaN High Electron Mobility Transistors Devices failure analysis Devices reliability Electrical devices degradation failure Electronic device reliability Failure Analysis of Semiconductor Optical Devices GaN Device Passivation InGaN Laser Diode Degradation Materials Issues and Reliability of Electron Devices Materials reliability book Optical Evaluation Technique (OBIC) Optical devices degradation failure Reliability Simulation Reliability Testing Semiconductor Optical Devices Semiconductor Optical Devices, Reliability Testing Semiconductor devices failure Strain Effects in AlGaN/GaN HEMTs

Editors and affiliations

  • Osamu Ueda
    • 1
  • Stephen J. Pearton
    • 2
  1. 1.Graduate School of EngineeringKanazawa Institute of TechnologyTokyoJapan
  2. 2.Materials Science and EngineeringUniversity of FloridaGainesvilleUSA

Bibliographic information

  • DOI
  • Copyright Information Springer Science+Business Media New York 2013
  • Publisher Name Springer, New York, NY
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-1-4614-4336-0
  • Online ISBN 978-1-4614-4337-7
  • Buy this book on publisher's site