Hot Carriers in Semiconductors

1. Hot Carrier Luminescence and Femtosecond Spectroscopy

   1. Simulation of Raman Scattering from Noneequilibrium Phonons in InP and InAs

      • D. K. Ferry, E. D. Grann, K. T. Tsen

      Pages 81-84

   2. Hot Electrons and Noneequilibrium Phonons in Multiple δ-Doped GaAs

      • M. Asche, P. Kleinert, R. Hey, H. Kostial, B. Danilchenko, A. Klimashov et al.

      Pages 85-88

   3. Phonon Oscillations in a Spectrum of Reversible Bleaching of Gallium Arsenide under Interband Absorption of a High-Power Picosecond Light Pulse

      • I. L. Bronevoi, A. N. Krivonosov, V. I. Perel’

      Pages 89-91

   4. LO Phonon Emission and Femtosecond Non-Equilibrium Dynamics of Hot Electrons in GaAs

      • A. Leitenstorfer, C. Fürst, G. Tränkle, G. Weimann, A. Laubereau

      Pages 93-96

   5. Hot Carrier Thermalization Dynamics in Low-Temperature-Grown III-V Semiconductors

      • A. I. Lobad, Y. Kostoulas, G. W. Wicks, P. M. Fauchet

      Pages 97-99

   6. Hot Carrier Dynamics in the X Valley in Si and Ge measured by Pump-IR-Probe Absorption Spectroscopy

      • W. B. Wang, M. A. Cavicchia, R. R. Alfano

      Pages 101-103

   7. Ultrafast Hole Heating in Intrinsic GaAs

      • F. Vallée, P. Langot, R. Tommasi

      Pages 105-108

   8. Green’s Functions versus Density Matrices: Aspects of Free-Carrier Screening in Highly Excited Semiconductors

      • U. Hohenester, W. Pötz

      Pages 109-111

   9. Ultrafast Photoluminescence Decay in GaAs grown by Low-Temperature Molecular-Beam-Epitaxy

      • A. Krotkus, S. Marcinkevičius, R. Viselga

      Pages 113-115

   10. Sub-Picosecond Luminescence Spectra of Photoexcited Electrons Relaxation in p-GaAs

       • Mohamed A. Osman, Novat Nintunze

       Pages 117-119

   11. Role of the Electron-Hole Interaction on Femtosecond Hole Relaxation in InP

       • G. R. Allan, H. M. van Driel

       Pages 121-124

   12. Field Induced Electron Capture by Metastable Centers in Planar-Doped GaAs:Si

       • R. Stasch, M. Asche, M. Giehler, R. Hey, O. G. Sarbey

       Pages 125-127

   13. Femtosecond Time-Resolved Photoluminescence Measurements of PPV, MEH-PPV and CN-PPV

       • G. R. Hayes, I. D. W. Samuel, R. T. Phillips

       Pages 129-131

2. Bloch Oscillations and Fast Coherent Process in Semiconductors

   1. Front Matter

      Pages 133-133

      PDF

   2. Strong Terahertz-Photocurrent Resonances in Miniband Superlattices at the Bloch Frequency

      • K. Unterrainer, B. J. Keay, M. C. Wanke, S. J. Allen, D. Leonard, G. Medeiros-Ribeiro et al.

      Pages 135-138

   3. Photon-Assisted Electric Field Domains and Multiphoton-Assisted Tunneling in Antenna Coupled Semiconductor Superlattices

      • B. J. Keay, S. J. Allen Jr., J. Galán, K. L. Campman, A. C. Gossard, U. Bhattacharya et al.

      Pages 139-142

   4. Wannier-Stark Resonances in DC Transport and Electrically Driven Bloch Oscillations

      • A. Di Carlo, C. Hamaguchi, M. Yamaguchi, H. Nagasawa, M. Morifuji, P. Vogl et al.

      Pages 143-146

   5. Quantum Properties of Bloch Electrons in Spatially Homogeneous Electric Fields

      • Jun He, Gerald J. Iafrate

      Pages 147-152

   6. Bloch Oscillations and Dynamic NDC Under a Multiminiband Transport in Superlattices

      • A. Andronov, I. Nefedov

      Pages 153-156

   7. Phonon-Induced Suppression of Bloch Oscillations in Semiconductor Superlattices: a Monte Carlo Investigation

      • F. Rossi, T. Meier, P. Thomas, S. W. Koch, P. E. Selbmann, E. Molinari

      Pages 157-160

This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen­ tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

• Exciton
• MOSFET
• Semiconductor
• electron transport
• electrons
• laser diode
• online
• semiconductors
• simulation
• spectroscopy
• temperature

• University of Illinois at Urbana — Champaign, Urbana, USA

  Karl Hess, Jean-Pierre Leburton, Umberto Ravaioli

Policies and ethics