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  • Textbook
  • © 2008

Semiconductor Device Physics and Design

  • A Graduate text including Problems and Solutions

  • Includes semiconductors device physics and design of devices based on materials that are rapidly becoming dominant such as GaN and SiGe

  • The Book treats advanced topics in a manner that does not lose rigor but remains compatible with a lecture format. High Frequency device analysis is a case-in-point where mixing device, charge control and circuit analysis makes for a more understandable delivery

Buying options

eBook USD 84.99
Price excludes VAT (USA)
  • ISBN: 978-1-4020-6481-4
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
Softcover Book USD 109.99
Price excludes VAT (USA)
Hardcover Book USD 159.99
Price excludes VAT (USA)

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Table of contents (10 chapters)

  1. Front Matter

    Pages I-XXIV
  2. Structural Properties of Semiconductors

    • Umesh K. Mishra, Jasprit Singh
    Pages 1-27
  3. Electronic levels in semiconductors

    • Umesh K. Mishra, Jasprit Singh
    Pages 28-91
  4. Charge transport in materials

    • Umesh K. Mishra, Jasprit Singh
    Pages 92-145
  5. Junctions in Semiconductors: P-N Diodes

    • Umesh K. Mishra, Jasprit Singh
    Pages 146-215
  6. Semiconductor Junctions

    • Umesh K. Mishra, Jasprit Singh
    Pages 216-245
  7. Bipolar Junction Transistors

    • Umesh K. Mishra, Jasprit Singh
    Pages 246-303
  8. Temporal Response Of Diodes and Bipolar Transistors

    • Umesh K. Mishra, Jasprit Singh
    Pages 304-355
  9. Field Effect Transistors

    • Umesh K. Mishra, Jasprit Singh
    Pages 356-432
  10. Field Effect Transistors: MOSFET

    • Umesh K. Mishra, Jasprit Singh
    Pages 433-488
  11. Coherent Transport and Mesoscopic Devices

    • Umesh K. Mishra, Jasprit Singh
    Pages 489-551
  12. Back Matter

    Pages 552-559

About this book

Semiconductor Device Physics and Design provides a fresh and unique teaching tool. Over the last decade device performances are driven by new materials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based heterostructures. New physics based on polar charges and polar interfaces has become important as a result of the nitrides. Nitride based devices are now used for high power applications and in lighting and display applications. For students to be able to participate in this exciting arena, a lot of physics, device concepts, heterostructure concepts and materials properties need to be understood. It is important to have a textbook that teaches students and practicing engineers about all these areas in a coherent manner.

Semiconductor Device Physics and Design starts out with basic physics concepts including the physics behind polar heterostructures and strained heterostructures. Important devices ranging from p-n diodes to bipolar and field effect devices are then discussed. An important distinction users will find in this book is the discussion presented on device needs from the perspective of various technologies. For example, how much gain is needed in a transistor, how much power, what kind of device characteristics is needed? Not surprisingly the needs depend upon applications. The needs of an A/D or D/A converter will be different from that of an amplifier in a cell phone. Similarly the diodes used in a laptop will place different requirements on the device engineer than diodes used in a mixer circuit. By relating device design to device performance and then relating device needs to system use the student can see how device design works in real world.

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Semiconductor Device Physics and Design is comprehensive without being overwhelming. The focus was to make this a useful text book so that the information contained is cohesive without including all aspects of device physics. The lesson plans demonstrated how this book could be used in a 1 semester or 2 quarter sequence.

Keywords

  • Doping
  • Semiconductor
  • bipolar junction transistor
  • delta-doped field-effect transistor
  • field-effect transistor
  • heterojunction bipolar transistor
  • junction field-effect transistor
  • metal oxide semiconductur field-effect transistor
  • metal semiconductor field-effect transistor
  • metal-oxide-semiconductor transistor
  • modulation-doped field-effect transistor
  • spintronics
  • static-induction transistor

Reviews

From the reviews:

"This book is a course very well written and comprehensive dedicated to semiconductors. The authors have detailed fundamental concepts from basic physics until research and development topics. … Important semiconductors properties are summarized in useful tables at the end of the book. To help students to be familiar with the theory, examples are detailed in the text and at the end of each chapter exercises are proposed." (Grégory Guisbiers, Physicalia, Vol. 30 (2), 2008)

"This is a classical textbook about the physics of semiconductor devices. It is intended for electrical engineers, but is also useful for young physicists. The book is very clear and covers all the main knowledge necessary for a graduate student in the area of semiconductors … . It contains many helpful figures, examples and problem sets. This book is also a good guide for teachers. In addition, advanced researchers could use it because the needed information is easy to find and extremely well synthesized." (Mircea Dragoman, Optics and Photonics News, September, 2008)

Authors and Affiliations

  • University of California, Santa Barbara, USA

    Umesh K. Mishra

  • The University of Michigan, Ann Arbor, USA

    Jasprit Singh

About the authors

Dr. Umesh K. Mishra is Professor at UC Santa Barbara in the Department of Electrical and Computer Engineering. His areas of focus include: Electronics and Photonics: high-speed transistors, semiconductor device physics, quantum electronics, optical control, design and fabrication of millimeter-wave devices, in situation processing and integration techniques.  Professor Mishra joined the College's ECE Department in 1990 from the Department of Electrical and Computer Engineering at North Carolina State University. A recognized leader in the area of high-speed field effect transistors, Dr. Mishra has made major contributions at every laboratory and academic institution for which he has worked, including: Hughes Research Laboratories in Malibu, California; the University of Michigan at Ann Arbor; and General Electric, Syracuse, New York. His current research areas attempt to develop an understanding of novel materials and extend them into applications. He is the Director of the AFOSR PRET Center for Non-Stoichiometric Semiconductors and of the ONR MURI Center (IMPACT), which relates to the application of SiC and GaN based transistors for power amplification. In 1989 Dr. Mishra received the Presidential Young Investigator Award from the National Science Foundation. In 1992 he received the Young Scientist of the Year Award from the International Symposium on GaAs and Related Compounds. He was elected as a Fellow of IEEE in 1995.

Jasprit Singh joined the University of Michigan, Ann Arbor, in 1985 and he is Professor in the Electrical Engineering and Computer Science department.

Bibliographic Information

Buying options

eBook USD 84.99
Price excludes VAT (USA)
  • ISBN: 978-1-4020-6481-4
  • Instant PDF download
  • Readable on all devices
  • Own it forever
  • Exclusive offer for individuals only
  • Tax calculation will be finalised during checkout
Softcover Book USD 109.99
Price excludes VAT (USA)
Hardcover Book USD 159.99
Price excludes VAT (USA)