Editors:
- Brings together a variety of modeling techniques
- Treats models as well as methods of implementation
- Is a true in depth source for MOS-modelers
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Table of contents (10 chapters)
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Front Matter
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Back Matter
About this book
Reviews
"A comprehensive book on state of the art emerging MOSFET models for the design and simulation of analog, digital or RF Integrated Circuits."
Narain Arora, Cadence Design Systems, California, USA
"This book covers modern topics in semiconductor TCAD, circuit simulation, compact models, RF modeling, etc. which are hard to find together anywhere else."
Peter Bendix, Xpedion Design Systems, California, USA
Editors and Affiliations
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Freescale, Switzerland
WLADYSLAW GRABINSKI
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Belgium
BART NAUWELAERS
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Leuven, Belgium
DOMINIQUE SCHREURS
About the editors
Bibliographic Information
Book Title: Transistor Level Modeling for Analog/RF IC Design
Editors: WLADYSLAW GRABINSKI, BART NAUWELAERS, DOMINIQUE SCHREURS
DOI: https://doi.org/10.1007/1-4020-4556-5
Publisher: Springer Dordrecht
eBook Packages: Engineering, Engineering (R0)
Copyright Information: Springer Science+Business Media B.V. 2006
Hardcover ISBN: 978-1-4020-4555-4Published: 22 March 2006
Softcover ISBN: 978-90-481-7148-4Published: 19 October 2010
eBook ISBN: 978-1-4020-4556-1Published: 01 July 2006
Edition Number: 1
Number of Pages: XIV, 294
Topics: Circuits and Systems, Electronics and Microelectronics, Instrumentation, Microwaves, RF and Optical Engineering, Electrical Engineering