About this book

Introduction

The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.

Keywords

electron energy loss spectroscopy epitaxy semiconductor simulation spectroscopy

Bibliographic information

  • DOI https://doi.org/10.1007/BFb0109548
  • Copyright Information Springer-Verlag 1999
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-540-65199-4
  • Online ISBN 978-3-540-49485-0
  • Series Print ISSN 0081-3869
  • Series Online ISSN 1615-0430
  • About this book