Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions

  • Kazuto¬†Akiba

Part of the Springer Theses book series (Springer Theses)

Table of contents

  1. Front Matter
    Pages i-xxiv
  2. Kazuto Akiba
    Pages 1-13
  3. Kazuto Akiba
    Pages 15-38
  4. Kazuto Akiba
    Pages 39-74
  5. Kazuto Akiba
    Pages 75-113
  6. Kazuto Akiba
    Pages 115-118
  7. Back Matter
    Pages 145-147

About this book


This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurement using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe).

The book presents two significant findings for BP and PbTe. The first is the successful demonstration of the pressure-induced transition from semiconductor to semimetal in the electronic structure of BP using magnetoresistance measurements. The second is the quantitative estimation of how well the Dirac fermion description works for electronic properties in PbTe.

The overviews on BP and PbTe from the point of view of material properties help readers quickly learn typical electronic characters of narrow-gap semiconductor materials, which have recently attract interest in topological features in condensed matter physics. Additionally the introductory review of the principles and methodology allows readers to easily understand the high magnetic field and pressure experiments.


Narrow-Gap Semiconductor and Semimetal Semimetallic Black Phosphorus Pressured Lead Telluride Quantum Oscillations in Pulsed Magnetic Field Spin-Split Quantum Oscillations Shubnikov-de Haas Oscillation Magneto-Phonon Resonance Measurment Pressure-Induced Semiconductor-Semimetal Transition Extremely Large Positive Magnetoresistance

Authors and affiliations

  • Kazuto¬†Akiba
    • 1
  1. 1.Graduate School of Natural Science and TechnologyOkayama UniversityOkayamaJapan

Bibliographic information