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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect

  • Jie┬áCheng
Book

Part of the Springer Theses book series (Springer Theses)

About this book

Introduction

This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

Keywords

Chemical mechanical polishing Novel barrier layer material Tribocorrosion properties Cu/Ru galvanic corrosion Chemical-mechanical synergistic effect

Authors and affiliations

  • Jie┬áCheng
    • 1
  1. 1.Tsinghua University BeijingChina

Bibliographic information

  • DOI https://doi.org/10.1007/978-981-10-6165-3
  • Copyright Information Springer Nature Singapore Pte Ltd. 2018
  • Publisher Name Springer, Singapore
  • eBook Packages Engineering
  • Print ISBN 978-981-10-6164-6
  • Online ISBN 978-981-10-6165-3
  • Series Print ISSN 2190-5053
  • Series Online ISSN 2190-5061
  • Buy this book on publisher's site