Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

  • Eric Garfunkel
  • Evgeni Gusev
  • Alexander Vul’

Part of the NATO Science Series book series (ASHT, volume 47)

Table of contents

  1. Front Matter
    Pages i-xi
  2. Introduction

    1. L C Feldman, E. P. Gusev, E. Garfunkel
      Pages 1-24
  3. Section 1. Recent advances in experimental studies of SiO2films on Si

  4. Section 2. Theory of the SiO2/Si and SiOxNy/Si systems

  5. Section 3: Growth mechanism, processing, and analysis of (oxy)nitridation

    1. I. Trimaille, J.-J. Ganem, L. G. Gosset, S. Rigo, I. J. R. Baumvol, F. C. Stedile et al.
      Pages 165-179
    2. M. L. Green, D. Brasen, L. C. Feldman, E. Garfunkel, E. P. Gusev, T. Gustafsson et al.
      Pages 181-190
    3. H. B. Harrison, H.-F. Li, S. Dimitrijev, P. Tanner
      Pages 191-215
    4. A. Mattheus, A. Gschwandtner, G. Innertsberger, A. Grassl, A. Talg
      Pages 217-226
    5. T. D. M. Salgado, I. J. R. Baumvol, C. Radtke, C. Krug, F. C. Stedile
      Pages 227-240
  6. Section 4: Initial oxidation and surface science issues

  7. Section 5: Electrical properties and microscopic models of defects

  8. Section 6: HydrogenlDeuterium issues

    1. Edward H. Poindexter, Christopher F. Young, Gary J. Gerardi
      Pages 397-409
    2. F. H. P. M. Habraken, E. H. C. Ullersma, W. M. Arnoldbik, A. E. T. Kuiper
      Pages 411-424
    3. J. M. M. De Nijs, K. G. Druijf, V. V. Afanas’ev
      Pages 425-430
  9. Section 7: New substrates (SiC, SiGel and SOl technologies

  10. Back Matter
    Pages 503-507

About this book


An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of <3 nm will be required in the near future. Given the importance of ultrathin gate dielectrics, well-focused basic scientific research and aggressive development programs must continue on the silicon oxide, oxynitride, and high K materials on silicon systems, especially in the critical, ultrathin 1-3 nm regime. The main thrust of the present book is a review, at the nano and atomic scale, the complex scientific issues related to the use of ultrathin dielectrics in next-generation Si-based devices. The contributing authors are leading scientists, drawn from academic, industrial and government laboratories throughout the world, and representing such backgrounds as basic and applied physics, chemistry, electrical engineering, surface science, and materials science.
Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.


Surface science chemistry cutting defects dielectrics electrical engineering materials science oxidation silicon surface

Editors and affiliations

  • Eric Garfunkel
    • 1
  • Evgeni Gusev
    • 1
  • Alexander Vul’
    • 2
  1. 1.Rutgers UniversityPiscatawayUSA
  2. 2.A.F. loffe Physico- Technical Institute of the Russian Academy of ScienceSt. PetersburgRussia

Bibliographic information

  • DOI
  • Copyright Information Kluwer Academic Publishers 1998
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-0-7923-5008-8
  • Online ISBN 978-94-011-5008-8
  • Series Print ISSN 1388-6576
  • Buy this book on publisher's site