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Novel Silicon Based Technologies

  • R. A. Levy

Part of the NATO ASI Series book series (NSSE, volume 193)

Table of contents

  1. Front Matter
    Pages i-xii
  2. M. Van Rossum, J. De Boeck, M. De Potter, G. Borghs
    Pages 1-24
  3. Alfred H. Van Ommen
    Pages 25-69
  4. S. U. Campisano, C. Spinella, F. Priolo
    Pages 71-86
  5. R. M. Langdon
    Pages 143-172
  6. S. Valette, J. P. Jadot, P. Gidon, S. Renard, G. Grand, A. Fournier et al.
    Pages 173-240
  7. Robert C. Frye, Edward A. Rietman
    Pages 241-267
  8. Back Matter
    Pages 269-277

About this book

Introduction

Silicon, as an electronic substrate, has sparked a technological revolution that has allowed the realization of very large scale integration (VLSI) of circuits on a chip. These 6 fingernail-sized chips currently carry more than 10 components, consume low power, cost a few dollars, and are capable of performing data processing, numerical computations, and signal conditioning tasks at gigabit-per-second rates. Silicon, as a mechanical substrate, promises to spark another technological revolution that will allow computer chips to come with the eyes, ears, and even hands needed for closed-loop control systems. The silicon VLSI process technology which has been perfected over three decades can now be extended towards the production of novel structures such as epitaxially grown optoelectronic GaAs devices, buried layers for three dimensional integration, micromechanical mechanisms, integrated photonic circuits, and artificial neural networks. This book begins by addressing the processing of electronic and optoelectronic devices produced by using lattice mismatched epitaxial GaAs films on Si. Two viable technologies are considered. In one, silicon is used as a passive substrate in order to take advantage of its favorable properties over bulk GaAs; in the other, GaAs and Si are combined on the same chip in order to develop IC configurations with improved performance and increased levels of integration. The relationships between device operation and substrate quality are discussed in light of potential electronic and optoelectronic applications.

Keywords

computer crystal electronics epitaxy material metals optoelectronics

Editors and affiliations

  • R. A. Levy
    • 1
  1. 1.Physics DepartmentNew Jersey Institute of TechnologyNewarkUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-94-011-3430-9
  • Copyright Information Kluwer Academic Publishers 1991
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-94-010-5517-8
  • Online ISBN 978-94-011-3430-9
  • Series Print ISSN 0168-132X
  • Buy this book on publisher's site