Crucial Issues in Semiconductor Materials and Processing Technologies

  • S. Coffa
  • F. Priolo
  • E. Rimini
  • J. M. Poate

Part of the NATO ASI Series book series (NSSE, volume 222)

Table of contents

  1. Front Matter
    Pages i-xix
  2. Materials & Devices

  3. Processing Technologies

    1. Front Matter
      Pages 109-109
    2. L. C. Kimerling
      Pages 111-117
    3. M. Geddo, B. Pivac
      Pages 119-127
    4. A. Castaldini, D. Cavalcoli, A. Cavallini
      Pages 135-139
    5. H. Bemelmans, G. Borghs, G. Langouche
      Pages 141-145
    6. Henry I. Smith, M. L. Schattenburg
      Pages 153-166
    7. E. Rimini
      Pages 167-194
    8. J. M. Poate, D. C. Jacobson, D. J. Eaglesham
      Pages 195-205
    9. V. Raineri, G. Galvagno, F. Priolo, E. Rimini
      Pages 207-211
    10. J. R. Liefting, J. S. Custer, R. J. Schreutelkamp, F. W. Saris
      Pages 219-224
    11. Ahmed Nejim, P. L. F. Hemment
      Pages 225-232
    12. F. Benyaïch, F. Priolo, E. Rimini, C. Spinella, P. Ward
      Pages 239-244
    13. Crid Yu, Nathan W. Cheung
      Pages 245-249
    14. Riccardo d’Agostino, Francesco Fracassi
      Pages 257-275
  4. Insulating & Metallic Layers

    1. Front Matter
      Pages 277-277
    2. M. Dammann, T. Stockmeier, H. Baltes
      Pages 299-304
    3. Jian Li, Stella Hong, S. Russell, James W. Mayer
      Pages 305-320
    4. Jay Strane, Jian Li, S. W. Russell, J. W. Mayer
      Pages 321-325
    5. J. Dekoster, P. Belien, Y. Bruynseraede, G. Langouche
      Pages 327-330
    6. J. M. Molarius, M. Orpana
      Pages 331-335
    7. K. Radermacher, S. Mantl, R. Apetz, Ch. Dieker, H. Lüth
      Pages 363-368
    8. C. M. Comrie, J. E. McLeod
      Pages 369-374
  5. Diffusion & Crystal Growth

    1. Front Matter
      Pages 381-381
    2. David T. Wu
      Pages 403-407
    3. A. V. Wagner, D. T. Wu, F. Spaepen
      Pages 409-413
    4. J. W. Honeycutt, G. A. Rozgonyi
      Pages 415-419
    5. S. Coffa, J. M. Poate
      Pages 427-444
    6. P. J. Simpson, M. Vos, C. Wu, I. V. Mitchell, P. J. Schultz
      Pages 451-457

About this book


Semiconductors lie at the heart of some of the most important industries and technologies of the twentieth century. The complexity of silicon integrated circuits is increasing considerably because of the continuous dimensional shrinkage to improve efficiency and functionality. This evolution in design rules poses real challenges for the materials scientists and processing engineers. Materials, defects and processing now have to be understood in their totality. World experts discuss, in this volume, the crucial issues facing lithography, ion implication and plasma processing, metallization and insulating layer quality, and crystal growth. Particular emphasis is placed upon silicon, but compound semiconductors and photonic materials are also highlighted. The fundamental concepts of phase stability, interfaces and defects play a key role in understanding these crucial issues. These concepts are reviewed in a crucial fashion.


Transistor complexity field-effect transistor integrated circuit metal oxide semiconductur field-effect transistor metal-oxide-semiconductor transistor static-induction transistor thin film thin film transistor

Editors and affiliations

  • S. Coffa
    • 1
  • F. Priolo
    • 1
  • E. Rimini
    • 1
  • J. M. Poate
    • 2
  1. 1.Physics DepartmentUniversity of CataniaCataniaItaly
  2. 2.AT&T Bell LaboratoriesMurray HillUSA

Bibliographic information

  • DOI
  • Copyright Information Kluwer Academic Publishers 1992
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-94-010-5203-0
  • Online ISBN 978-94-011-2714-1
  • Series Print ISSN 0168-132X
  • Buy this book on publisher's site