Progress in SOI Structures and Devices Operating at Extreme Conditions

  • F. Balestra
  • A. Nazarov
  • V. S. Lysenko

Part of the NATO Science Series book series (NAII, volume 58)

Table of contents

  1. Front Matter
    Pages i-x
  2. Innovation in material technologies

    1. Maria J. Anc
      Pages 1-10
    2. V. G. Beshenkov, V. S. Marchenko, A. G. Znamenskii, A. F. Vyatkin, V. S. Avrutin, N. F. Izyumskaya et al.
      Pages 11-15
    3. C. Serre, A. Peréz-Rodríguez, A. Romano-Rodríguez, J. R. Morante, J. Esteve, M. C. Acero et al.
      Pages 17-29
    4. J-P Joly, B. Aspar, M. Bruel, L. Di Cioccio, F. Letertre, E. Hugonnard-Bruyère
      Pages 31-38
    5. Takao Yonehara, Kifofumi Sakaguchi
      Pages 39-86
    6. V. P. Popov, A. L. Aseev, I. V. Antonova, Yu. V. Nastaushev, T. A. Gavrilova, O. V. Naumova et al.
      Pages 87-91
  3. Reliability of SOI devices operating at harsh conditions

    1. Cynthia A. Colinge
      Pages 93-104
    2. Colin Johnston, Alison Crossley
      Pages 129-137
    3. A. N. Nazarov, V. I. Kilchytska, I. P. Barchuk
      Pages 139-158
    4. V. S. Lysenko, I. P. Tyagulski, I. N. Osiyuk, Y. V. Gomeniuk
      Pages 159-166
    5. V. Dessard, B. Iniguez, S. Adriaensen, D. Flandre
      Pages 189-209
    6. C. Claeys, E. Simoen, V. G. Litovchenko, A. Evtukh, A. Efremov, A. Kizjak et al.
      Pages 211-220
    7. A. D. Mokrushin, N. M. Omeljanovskaja, A. V. Leonov, V. N. Mordkovich, D. M. Pazhin
      Pages 221-227
  4. Characterization of advanced SOI materials and devices

    1. V. N. Dobrovolsky, M. Balucani, A. Ferrari
      Pages 229-232
    2. A. Druzhinin, E. Lavitska, I. Maryamova, Y. Khoverko
      Pages 233-237
    3. F. Allibert, J. Pretet, T. Ernst, J. Jomaah, S. Cristoloveanu
      Pages 239-247
    4. P. Dimitrakis, J. Jomaah, F. Balestra, G. J. Papaioannou
      Pages 263-268
    5. V. P. Popov, A. K. Gutakovskii, L. N. Safronov, I. E. Tyschenko, S. K. Zhuravlev, A. B. Talochkin et al.
      Pages 269-288
    6. Daniel Tomaszewski, Krzysztof Domański, Lidia Łukasiak, Agnieszka Zaręba, Jan Gibki, Andrzej Jakubowski
      Pages 289-298
  5. Perspectives of SOI structures and devices

    1. K. D. Hobart, F. J. Kub, M. E. Twigg, M. Fatemi
      Pages 299-308
    2. V. Bondarenko, V. Yakovtseva, L. Dolgyi, N. Vorozov, S. Volchek, M. Balucani et al.
      Pages 309-327
    3. V. N. Dobrovolsky, L. V. Ishchuk, G. K. Ninidze
      Pages 329-332
    4. A. I. Klimovskaya, I. P. Ostrovskii, A. A. Efremov, A. V. Sarikov, S. A. Kostyukevich
      Pages 343-348
  6. Back Matter
    Pages 349-351

About this book


A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena.


Laser Sensor crystal field-effect transistor integrated circuit metal oxide semiconductur field-effect transistor modeling static-induction transistor thin film

Editors and affiliations

  • F. Balestra
    • 1
  • A. Nazarov
    • 2
  • V. S. Lysenko
    • 2
  1. 1.Institut de MicroélectroniqueElectromagnétisme et Photonique, INPG-CNRSGrenobleFrance
  2. 2.Institute of Semiconductor PhysicsNational Academy of SciencesKyivUkraine

Bibliographic information

  • DOI
  • Copyright Information Kluwer Academic Publishers 2002
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4020-0576-3
  • Online ISBN 978-94-010-0339-1
  • Series Print ISSN 1568-2609
  • Buy this book on publisher's site