Book Volume 58 2002

Progress in SOI Structures and Devices Operating at Extreme Conditions

Editors:

ISBN: 978-1-4020-0576-3 (Print) 978-94-010-0339-1 (Online)

Table of contents (27 chapters)

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  1. Front Matter

    Pages i-x

  2. Innovation in material technologies

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      Chapter

      Pages 1-10

      Perspectives of Simox Technology

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      Chapter

      Pages 11-15

      MBE Growth of the top Layer in Si/YSZ/Si Structure

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      Chapter

      Pages 17-29

      SiCOI Structures. Technology and Characterization

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      Chapter

      Pages 31-38

      New SiC on Insulator Wafers Based on the Smart-Cut® Approach and their Potential Applications

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      Chapter

      Pages 39-86

      ELTRAN® (SOI-Epi Wafer™) Technology

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      Chapter

      Pages 87-91

      Low Dimension Properties of Nanostructures on Ultrathin Layers of Silicon Formed by Oxidation of Ion Cut SOI Wafers and Electron Lithography

  3. Reliability of SOI devices operating at harsh conditions

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      Chapter

      Pages 93-104

      SOI For Harsh Environment Applications in the USA

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      Chapter

      Pages 105-127

      Performance and Reliability of Deep Submicron SOI Mosfets in a Wide Temperature Range

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      Chapter

      Pages 129-137

      Strategies for High Temperature Electronics

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      Chapter

      Pages 139-158

      Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures

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      Chapter

      Pages 159-166

      Cryogenic Investigations of SIMOX Buried Oxide Parameters

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      Chapter

      Pages 167-188

      Gate-All-Around Technology for Harsh Environment Applications

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      Chapter

      Pages 189-209

      Low-Noise High-Temperature SOI Analog Circuits

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      Chapter

      Pages 211-220

      Influence of γ- Radiation on Short Channel SOI-MOSFETs with Thin SiO2 Films

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      Chapter

      Pages 221-227

      Radiation Effects in SOI Magnetic Sensitive Elements Under Different Radiation Conditions

  4. Characterization of advanced SOI materials and devices

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      Chapter

      Pages 229-232

      Similarity Relation for I-V Characteristics of FETs with different Channel Shape

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      Chapter

      Pages 233-237

      Laser-Recrystallized SOI Layers for Sensor Applications at Cryogenic Temperatures

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      Chapter

      Pages 239-247

      Characterization and Modeling of Advanced SOI Materials and Devices

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      Chapter

      Pages 249-261

      Modeling and Measurements of Generation and Recombination Currents in Thin-Film SOI Gated-Diodes

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      Chapter

      Pages 263-268

      Defect Creation Mechanisms Due to Hot-Carriers in 0.15 μm SIMOX MOSFETs

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