Electronic Structure of Metal-Semiconductor Contacts

  • Winfried Mönch

Part of the Perspectives in Condensed Matter Physics book series (PCMP, volume 4)

Table of contents

  1. Front Matter
    Pages I-XII
  2. Winfried Mönch
    Pages 1-33
  3. W. Schottky, W. Deutschmann
    Pages 45-52
  4. W. Schottky
    Pages 53-53
  5. Volker Heine
    Pages 83-90
  6. S. Kurtin, T. C. McGill, C. A. Mead
    Pages 91-94
  7. E. Louis, F. Yndurain, F. Flores
    Pages 105-115
  8. Steven G. Louie, Marvin L. Cohen
    Pages 116-124
  9. Steven G. Louie, James R. Chelikowsky, Marvin L. Cohen
    Pages 125-133
  10. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, I. Lindau
    Pages 142-152
  11. J. L. Freeouf, J. M. Woodall
    Pages 154-156
  12. J. G. Clabes, G. W. Rubloff, B. Reihl, R. J. Purtell, P. S. Ho, A. Zartner et al.
    Pages 157-160
  13. S. B. Zhang, Marvin L. Cohen, Steven G. Louie
    Pages 188-190
  14. Matthias Ludwig, Günter Heymanna, Peter Janietz
    Pages 191-198
  15. Inder P. Batra, S. Ciraci
    Pages 199-201
  16. K. Stiles, A. Kahn, D. G. Kidlay, G. Margaritondo
    Pages 228-232
  17. Renyu Cao, Ken Miyano, Tom Kendelewicz, Ken K. Chin, Ingolf Lindau, William E. Spicer
    Pages 233-237
  18. J. Werner, A. F. J. Levi, R. T. Tung, M. Anzlowar, M. Pinto
    Pages 244-247
  19. W. E. Spicer, Z. Liliental-Weber, E. Weber, N. Newman, T. Kendelewicz, R. Cao et al.
    Pages 260-266
  20. R. Ludeke, G. Jezequel, A. Taleb-lbrahimi
    Pages 267-274
  21. C. Laubschat, M. Prietsch, M. Domke, E. Weschke, G. Remmers, T. Mandel et al.
    Pages 280-283
  22. P. N. First, Joseph A. Stroscio, R. A. Dragoset, D. T. Pierce, R. J. Celotta
    Pages 284-287
  23. Back Matter
    Pages 289-293

About this book


Interface and surface science have been important in the development of semicon­ ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor­ insulator interfaces, heterojunctions between distinct semiconductors, and metal­ semiconductor contacts. The latter ones stood almost at the very beginning of semi­ conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-


AES Experiment Halbleiter Kupfer Potential REM STEM development

Editors and affiliations

  • Winfried Mönch
    • 1
  1. 1.Universität DuisburgGermany

Bibliographic information

  • DOI
  • Copyright Information Springer Science+Business Media B.V. 1990
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-94-010-6780-5
  • Online ISBN 978-94-009-0657-0
  • Series Print ISSN 0923-1749
  • Buy this book on publisher's site