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© 1996

Early Stages of Oxygen Precipitation in Silicon

  • R. Jones
Book

Part of the NATO ASI Series book series (ASHT, volume 17)

Table of contents

  1. Front Matter
    Pages i-xviii
  2. C. A. J. Ammerlaan, I. S. Zevenbergen, Yu. V. Martynov, T. Gregorkiewicz
    Pages 61-82
  3. V. P. Markevich, I. F. Medvedeva, L. I. Murin
    Pages 103-122
  4. Jörg Weber, Dirk I Bohne
    Pages 123-140
  5. C. P. Ewels, R. Jones, S. Öberg
    Pages 141-162
  6. Stefan K. Estreicher, Young K. Park, Peter A. Fedders
    Pages 179-195
  7. M. Ramamoorthy, S. T. Pantelides
    Pages 197-205
  8. U. Gösele, E. Schroer, P. Werner, T. Y. Tan
    Pages 243-261
  9. E. C. Lightowlers, Gordon Davies
    Pages 303-318
  10. F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro et al.
    Pages 319-327
  11. L. I. Murin, V. P. Markevich
    Pages 329-336

About this book

Introduction

It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor­ mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma­ terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra­ red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.

Keywords

Magnetic Resonance crystal modeling semiconductors spectroscopy

Editors and affiliations

  • R. Jones
    • 1
  1. 1.Department of PhysicsUniversity of ExeterExeterUK

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