Early Stages of Oxygen Precipitation in Silicon

  • R. Jones

Part of the NATO ASI Series book series (ASHT, volume 17)

Table of contents

  1. Front Matter
    Pages i-xviii
  2. C. A. J. Ammerlaan, I. S. Zevenbergen, Yu. V. Martynov, T. Gregorkiewicz
    Pages 61-82
  3. V. P. Markevich, I. F. Medvedeva, L. I. Murin
    Pages 103-122
  4. Jörg Weber, Dirk I Bohne
    Pages 123-140
  5. C. P. Ewels, R. Jones, S. Öberg
    Pages 141-162
  6. Stefan K. Estreicher, Young K. Park, Peter A. Fedders
    Pages 179-195
  7. M. Ramamoorthy, S. T. Pantelides
    Pages 197-205
  8. U. Gösele, E. Schroer, P. Werner, T. Y. Tan
    Pages 243-261
  9. E. C. Lightowlers, Gordon Davies
    Pages 303-318
  10. F. Berg Rasmussen, S. Öberg, R. Jones, C. Ewels, J. Goss, J. Miro et al.
    Pages 319-327
  11. L. I. Murin, V. P. Markevich
    Pages 329-336
  12. V. V. Emtsev, B. A. Andreev, A. Misiuk, K. Schmalz
    Pages 345-353
  13. E. McGlynn, M. O. Henry, S. E. Daly, K. G. McGuigan
    Pages 355-362
  14. A. Correia, D. Ballutaud, A. Boutry-Forveille
    Pages 363-369
  15. K. Kawakami, H. Harada, T. Iwasaki, R. Habu
    Pages 371-379
  16. R. J. Stewart, S. Messoloras, S. Rycroft
    Pages 381-388
  17. L. I. Khirunenko, V. I. Shakhovtsov, V. V. Shumov, V. I. Yashnik
    Pages 397-402
  18. L. I. Khirunenko, V. I. Shakhovtsov, V. V. Shumov, V. I. Yashnik
    Pages 403-409
  19. A. P. Knights, R. D. Goldberg, U. Myler, P. J. Simpson
    Pages 411-418
  20. Adam Gali, József Miro, Peter Deák
    Pages 419-425
  21. L. C. Snyder, R. Wu, P Deak
    Pages 427-432
  22. P. J. Grönberg, J. von Boehm, R. M. Nieminen
    Pages 441-446
  23. S. Senkader, G. Hobler
    Pages 447-454
  24. A. G. Ulyashin, Yu. A. Bumai, A. I. Ivanov, V. S. Varichenko, N. M. Kazychits, A. M. Zaitsev et al.
    Pages 455-462
  25. J. E. Gower, E. C. Lightowlers, G. Davies, A. N. Safonov
    Pages 463-468
  26. J. Vanhellemont, G. Kissinger, K. Kenis, M. Depas, D. Gräf, U. Lambert et al.
    Pages 493-500
  27. M. A. Trauwaert, J. Vanhellemont, A. M. van Bavel, P. Clauws, A. Stesmans, H. E. Maes et al.
    Pages 501-508
  28. H. Ono, T. Ikarashi, S. Kimura, A. Tanikawa, K. Terashima
    Pages 509-516
  29. T. M. Tkacheva, G. N. Petrov, K. L. Enisherlova, N. A. Iasamanov
    Pages 517-525
  30. Back Matter
    Pages 527-530

About this book


It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor­ mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma­ terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra­ red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.


Magnetic Resonance crystal modeling semiconductors spectroscopy

Editors and affiliations

  • R. Jones
    • 1
  1. 1.Department of PhysicsUniversity of ExeterExeterUK

Bibliographic information

  • DOI
  • Copyright Information Springer Science+Business Media B.V. 1996
  • Publisher Name Springer, Dordrecht
  • eBook Packages Springer Book Archive
  • Print ISBN 978-94-010-6645-7
  • Online ISBN 978-94-009-0355-5
  • Series Print ISSN 1388-6576
  • Buy this book on publisher's site