POWER/HVMOS Devices Compact Modeling

  • Wladyslaw Grabinski
  • Thomas Gneiting

Table of contents

  1. Front Matter
    Pages i-xii
  2. Oliver Triebl, Tibor Grasser
    Pages 1-31
  3. H. J. Mattausch, N. Sadachika, M. Yokomichi, M. Miyake, T. Kajiwara, Y. Oritsuki et al.
    Pages 33-64
  4. Yogesh Singh Chauhan, Francois Krummenacher, Adrian Mihai Ionescu
    Pages 95-127
  5. Andrzej Napieralski, Małgorzata Napieralska, Łukasz Starzak
    Pages 129-148
  6. Patrick Austin, Jean-Louis Sanchez
    Pages 149-182
  7. Andrzej Napieralski, Łukasz Starzak, Bartłomiej Świercz, Mariusz Zubert
    Pages 183-198
  8. Back Matter
    Pages 199-200

About this book

Introduction

Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. Power/HVMOS Devices Compact Modeling is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.

Keywords

Double-diffused metal-oxide-semiconductor transistor Leistungsfeldeffekttransistor V-groove metal-oxide-semiconductor transistor circuit electronics field-effect transistor insulated-gate bipolar transistor integrated circuit metal oxide semiconductur field-effect transistor model modeling power electronics power, high voltage semiconductor devices semiconductor simulation

Editors and affiliations

  • Wladyslaw Grabinski
    • 1
  • Thomas Gneiting
    • 2
  1. 1.CommugnySwitzerland
  2. 2.(Advanced Modeling Solutions)AdMOS GmbHFrickenhausenGermany

Bibliographic information

  • DOI https://doi.org/10.1007/978-90-481-3046-7
  • Copyright Information Springer Science+Business Media B.V. 2010
  • Publisher Name Springer, Dordrecht
  • eBook Packages Engineering
  • Print ISBN 978-90-481-3045-0
  • Online ISBN 978-90-481-3046-7
  • About this book