About this book
Oxide materials are good candidates for replacing Si devices, which are increasingly reaching their performance limits, since the former offer a range of unique properties, due to their composition, design and/or doping techniques.
The author introduces a means of selecting oxide materials according to their functions and explains metal/oxide interface physics. As he demonstrates, material development is the key to matching oxide materials to specific practical applications.
In this book, the investigation and intentional control of metal/oxide interface structure and electrical properties using data obtained with non-destructive methods such as x-ray photoelectron spectroscopy (XPS) and x-ray reflectometry (XRR) are discussed. Further, it shows how oxide materials can be used to support the development of future functional devices with high-k, ferroelectric, magnetic and optical properties. In closing, it explains optical sensors as an application of metal Schottky contact and metal/oxide resistive random access memory structure.
- Book Title Nanoscale Redox Reaction at Metal/Oxide Interface
- Book Subtitle A Case Study on Schottky Contact and ReRAM
- Series Title NIMS Monographs
- Series Abbreviated Title NIMS Monographs
- DOI https://doi.org/10.1007/978-4-431-54850-8
- Copyright Information National Institute for Materials Science, Japan 2020
- Publisher Name Springer, Tokyo
- eBook Packages Chemistry and Materials Science Chemistry and Material Science (R0)
- Softcover ISBN 978-4-431-54849-2
- eBook ISBN 978-4-431-54850-8
- Series ISSN 2197-8891
- Series E-ISSN 2197-9502
- Edition Number 1
- Number of Pages XI, 89
- Number of Illustrations 12 b/w illustrations, 51 illustrations in colour
Surfaces and Interfaces, Thin Films
Electronics and Microelectronics, Instrumentation
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