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The Drift Diffusion Equation and Its Applications in MOSFET Modeling

  • Wilfried Hänsch

Part of the Computational Microelectronics book series (COMPUTATIONAL)

Table of contents

  1. Front Matter
    Pages I-XII
  2. Wilfried Hänsch
    Pages 1-47
  3. Wilfried Hänsch
    Pages 48-110
  4. Wilfried Hänsch
    Pages 111-141
  5. Wilfried Hänsch
    Pages 142-187
  6. Wilfried Hänsch
    Pages 188-246
  7. Back Matter
    Pages 247-271

About this book

Introduction

To be perfect does not mean that there is nothing to add, but rather there is nothing to take away Antoine de Saint-Exupery The drift-diffusion approximation has served for more than two decades as the cornerstone for the numerical simulation of semiconductor devices. However, the tremendous speed in the development of the semiconductor industry demands numerical simulation tools that are efficient and provide reliable results. This makes the development of a simulation tool an interdisciplinary task in which physics, numerical algorithms, and device technology merge. For the sake of an efficient code there are trade-offs between the different influencing factors. The numerical performance of a program that is highly flexible in device types and the geometries it covers certainly cannot compare with a program that is optimized for one type of device only. Very often the device is sufficiently described by a two­ dimensional geometry. This is the case in a MOSFET, for example, if the gate length is small compared with the gate width. In these cases the geometry reduces to the specification of a two-dimensional device. Here again the simplest geometries, which are planar or at least rectangular surfaces, will give the most efficient numerical codes. The device engineer has to decide whether this reduced description of the real device is still suitable for his purposes.

Keywords

Halbleiterbauelement Ladungstransport bridge energy mechanics metal oxide semiconductur field-effect transistor (MOSFET) model modeling quantum mechanics scattering semiconductor semiconductor device stress surface transport

Authors and affiliations

  • Wilfried Hänsch
    • 1
  1. 1.CharlotteUSA

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-7091-9095-1
  • Copyright Information Springer-Verlag Vienna 1991
  • Publisher Name Springer, Vienna
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-7091-9097-5
  • Online ISBN 978-3-7091-9095-1
  • Series Print ISSN 0179-0307
  • Buy this book on publisher's site