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The Monte Carlo Method for Semiconductor Device Simulation

  • Carlo Jacoboni
  • Paolo Lugli

Part of the Computational Microelectronics book series (COMPUTATIONAL)

Table of contents

  1. Front Matter
    Pages i-x
  2. Carlo Jacoboni, Paolo Lugli
    Pages 1-5
  3. Carlo Jacoboni, Paolo Lugli
    Pages 6-103
  4. Carlo Jacoboni, Paolo Lugli
    Pages 104-161
  5. Carlo Jacoboni, Paolo Lugli
    Pages 162-217
  6. Carlo Jacoboni, Paolo Lugli
    Pages 218-261
  7. Carlo Jacoboni, Paolo Lugli
    Pages 262-335
  8. Back Matter
    Pages 336-359

About this book

Introduction

The application of the Monte Carlo method to the simulation of semiconductor devices is presented. A review of the physics of transport in semiconductors is given, followed by an introduction to the physics of semiconductor devices. The Monte Carlo algorithm is discussed in great details, and specific applications to the modelling of semiconductor devices are given. A comparison with traditional simulators is also presented.

Keywords

Transistor Transport field-effect transistor heterojunction bipolar transistor integrated circuit ion-sensitive field effect transistor metal insulator semiconductur field-effect transistor metal oxide semiconductur field-effect transistor metal semiconductor field-effect transistor micro-alloy transistor, MAT physics simulation

Authors and affiliations

  • Carlo Jacoboni
    • 1
  • Paolo Lugli
    • 2
  1. 1.Dipartimento di FisicaUniversità di ModenaItaly
  2. 2.Dipartimento di Ingegneria MeccanicaII Università di Roma “Tor Vergata”Italy

Bibliographic information

  • DOI https://doi.org/10.1007/978-3-7091-6963-6
  • Copyright Information Springer-Verlag Vienna 1989
  • Publisher Name Springer, Vienna
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-7091-7453-1
  • Online ISBN 978-3-7091-6963-6
  • Series Print ISSN 0179-0307
  • Buy this book on publisher's site