Advanced Physical Models for Silicon Device Simulation

  • Andreas Schenk

Part of the Computational Microelectronics book series (COMPUTATIONAL)

Table of contents

  1. Front Matter
    Pages I-XVIII
  2. Andreas Schenk
    Pages 1-126
  3. Andreas Schenk
    Pages 170-251
  4. Andreas Schenk
    Pages 252-280
  5. Andreas Schenk
    Pages 316-319
  6. Back Matter
    Pages 320-354

About this book


Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys­ ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of "taylored quantum-mechanics". Each model is compared with experimental data and applied to a number of simulation exam­ ples. The problems when starting from "first principles" and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.


Diffusion EPROM PROM REM ROM mechanics model modeling physical model quantum mechanics semiconductor silicon device simulation transport equation

Authors and affiliations

  • Andreas Schenk
    • 1
  1. 1.Institut für Integrierte SystemeETH ZürichSchweiz

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag/Wien 1998
  • Publisher Name Springer, Vienna
  • eBook Packages Springer Book Archive
  • Print ISBN 978-3-7091-7334-3
  • Online ISBN 978-3-7091-6494-5
  • Series Print ISSN 0179-0307
  • Buy this book on publisher's site